參數(shù)資料
型號(hào)： MLD2N06CL
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： VOLTAGE CLAMPED CURRENT LIMITING MOSFET
中文描述： 2 A, 58 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： DPAK-3
文件頁數(shù)： 2/6頁
文件大?。?/td> 194K
代理商： MLD2N06CL
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(ID = 20 mAdc, VGS = 0 Vdc)
(ID = 20 mAdc, VGS = 0 Vdc, TJ = 150
°
C)
V(BR)DSS
58
58
62
62
66
66
Vdc
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 150
°
C)
IDSS
—
—
0.6
6.0
5.0
20
μ
Adc
Gate–Source Leakage Current
(VG = 5.0 Vdc, VDS = 0 Vdc)
(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150
°
C)
IGSS
—
—
0.5
1.0
5.0
20
μ
Adc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(ID = 250
μ
Adc, VDS = VGS)
(ID = 250
μ
Adc, VDS = VGS, TJ = 150
°
C)
VGS(th)
1.0
0.6
1.5
1
2.0
1.6
Vdc
Static Drain Current Limit
(VGS = 5.0 Vdc, VDS = 10 Vdc)
(VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150
°
C)
ID(lim)
3.8
1.6
4.4
2.4
5.2
2.9
Adc
Static Drain–to–Source On–Resistance
(ID = 1.0 Adc, VGS = 5.0 Vdc)
(ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150
°
C)
RDS(on)
—
—
0.3
0.53
0.4
0.7
Ohms
Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc)
Static Source–to–Drain Diode Voltage
(IS = 1.0 Adc, VGS = 0 Vdc)
gFS
VSD
1.0
1.4
—
mhos
—
1.1
1.5
Vdc
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
VGS(on) = 5.0 Vdc, RGS = 25 Ohms)
td(on)
tr
—
1.0
1.5
μ
s
Rise Time
(VDD = 30 Vdc, ID = 1.0 Adc,
—
3.0
5.0
Turn–Off Delay Time
td(off)
tf
—
5.0
8.0
Fall Time
—
3.0
5.0
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
Figure 1. Output Characteristics
Figure 2. Transfer Function
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25
°
C
VDS
≥
7.5 V
TJ = 150
°
C
25
°
C
–55
°
C
0
1
2
3
8
2.5
2.0
1.5
1.0
0.5
0
3.0
3.5
4.0
4
5
6
7
0
2
4
6
8
5
4
3
2
1
0
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
2.0 V
相關(guān)PDF資料
PDF描述
MLP1N06 VOLTAGE CLAMPED CURRENT LIMITING MOSFET
MLP1N06CL VOLTAGE CLAMPED CURRENT LIMITING MOSFET
MLX90215 Precision Programmable Linear Hall Effect Sensor
MLX90215EVA Precision Programmable Linear Hall Effect Sensor
MLX90215LVA Precision Programmable Linear Hall Effect Sensor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MLD2N06CLG 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N−Channel DPAK
MLD2N06CLT4 功能描述:MOSFET 10V 4.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MLD2N06CLT4G 功能描述:MOSFET 10V 4.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MLD400R 制造商:Sliger Designs, Inc. 功能描述:SUB-ASSY CX476 DOOR ASSY ROHS - Bulk
MLD5006 010X 制造商:Belden Inc 功能描述:6 #50 UM PBT PE AMD PE
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*