參數(shù)資料
型號: MJW21193
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Silicon Power Transistors
中文描述: 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-247
封裝: CASE 340L-02, 3 PIN
文件頁數(shù): 4/8頁
文件大小: 75K
代理商: MJW21193
MJW21193 (PNP) MJW21194 (NPN)
http://onsemi.com
4
VB
Figure 9. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 10. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 11. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VB
PNP MJW21193
NPN MJW21194
TYPICAL CHARACTERISTICS
PNP MJW21193
NPN MJW21194
3.0
2.5
2.0
1.5
1.0
0.5
0
100
10
1.0
0.1
1.4
100
10
1.0
0.1
1.2
1.0
0.8
0.6
0.4
0.2
0
10
100
10
1.0
0.1
1.0
0.1
10
100
10
1.0
0.1
1.0
0.1
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR EMITTER (VOLTS)
Figure 14. Active Region Safe Operating Area
PNP MJW21193
NPN MJW21194
100
1000
10
1.0
1.0
0.1
100
10
I
100 mSec
10 mSec
1 Sec
VCE, COLLECTOR EMITTER (VOLTS)
100
1000
10
1.0
1.0
0.1
100
10
I
100 mSec
10 mSec
1 Sec
相關PDF資料
PDF描述
MJW21194 Silicon Power Transistors
MJW21195 Silicon Power Transistors
MK4116 16,384 X 1 BIT DYNAMIC RAM
MK4116P-2 16,384 X 1 BIT DYNAMIC RAM
MK4116P-3 16,384 X 1 BIT DYNAMIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
MJW21193_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJW21193_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors
MJW21193G 功能描述:兩極晶體管 - BJT 16A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJW21193G 制造商:ON Semiconductor 功能描述:Transistor
MJW21194 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2