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參數(shù)資料
| 型號： | MJW1302A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 中文描述： | 15 A, 230 V, PNP, Si, POWER TRANSISTOR, TO-247AD |
| 封裝： | CASE 340L-02, TO-247, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | MJW1302A |
MJW3281A (NPN) MJW1302A (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
230
–
–
Vdc
Collector Cutoff Current
(VCB = 230 Vdc, IE = 0)
ICBO
–
–
50
μ
Adc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
–
–
5
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 100 Vdc, t = 1 s (non–repetitive)
IS/b
4
1
–
–
–
–
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
hFE
50
50
50
50
50
45
12
125
–
–
–
115
–
35
200
200
200
200
200
–
–
–
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
VCE(sat)
–
0.4
2
Vdc
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
–
–
2
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
fT
–
30
–
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
–
–
600
pF
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f
T
PNP MJW1302A
f
T
NPN MJW3281A
IC, COLLECTOR CURRENT (AMPS)
0.1
1.0
10
50
40
30
20
10
0
60
40
30
0
10
0.1
1.0
10
VCE = 10 V
5 V
TJ = 25
°
C
ftest = 1 MHz
20
VCE = 10 V
5 V
TJ = 25
°
C
ftest = 1 MHz
50
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJW1302AG | 功能描述:兩極晶體管 - BJT 15A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW16010 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS |
| MJW16010A | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| MJW16012 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS |
| MJW16018 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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