參數(shù)資料
型號(hào)： MJE2361TAN
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/59頁(yè)
文件大小： 340K
代理商： MJE2361TAN
3–626
Motorola Bipolar Power Transistor Device Data
NPN Silicon High-Voltage
Transistor
. . . useful for general–purpose, high voltage applications requiring high fT.
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc
DC Current Gain —
hFE = 40 (Min) @ IC = 100 mAdc — MJE2361T
Current–Gain–Bandwidth Product —
fT = 10 MHz (Typ) @ IC = 50 mAdc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
350
Vdc
Collector–Base Voltage
VCB
375
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
IC
0.5
Adc
Base Current
IB
0.25
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
30
0.24
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
4.167
_C/W
40
0
40
80
120
160
Figure 1. Power–Temperature Derating Curve
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
30
35
20
25
10
15
5.0
20
60
100
140
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE2360T
MJE2361T
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
350 VOLTS
30 WATTS
CASE 221A–06
TO–220AB
REV 1
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