參數(shù)資料
型號(hào)： MJE2360TBU
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/59頁(yè)
文件大小： 340K
代理商： MJE2360TBU
3–626
Motorola Bipolar Power Transistor Device Data
NPN Silicon High-Voltage
Transistor
. . . useful for general–purpose, high voltage applications requiring high fT.
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc
DC Current Gain —
hFE = 40 (Min) @ IC = 100 mAdc — MJE2361T
Current–Gain–Bandwidth Product —
fT = 10 MHz (Typ) @ IC = 50 mAdc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
350
Vdc
Collector–Base Voltage
VCB
375
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
IC
0.5
Adc
Base Current
IB
0.25
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
30
0.24
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
4.167
_C/W
40
0
40
80
120
160
Figure 1. Power–Temperature Derating Curve
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
30
35
20
25
10
15
5.0
20
60
100
140
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE2360T
MJE2361T
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
350 VOLTS
30 WATTS
CASE 221A–06
TO–220AB
REV 1
相關(guān)PDF資料
PDF描述
MJE2360TBV 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE2360T 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE2361TBG 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE2360TBG 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE2361TAJ 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE2361T 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(0.5A,350V,30W)
MJE240 制造商:Motorola Inc 功能描述:
MJE241 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJE242 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJE243 功能描述:兩極晶體管 - BJT 4A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*