參數(shù)資料
型號(hào): MJE18009BD
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 10 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 66/66頁
文件大?。?/td> 512K
代理商: MJE18009BD
MJE18009 MJF18009
3–758
Motorola Bipolar Power Transistor Device Data
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.110
″ MIN
Figure 22. Clip Mounting Position for
Isolation Test Number 1
* Measurement made between leads and heatsink with all leads shorted together
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
CLIP
0.107
″ MIN
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.107
″ MIN
Figure 23. Clip Mounting Position
for Isolation Test Number 2
Figure 24. Screw Mounting Position
for Isolation Test Number 3
TEST CONDITIONS FOR ISOLATION TESTS*
4–40 SCREW
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT
CLIP
HEATSINK
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a
constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack-
age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in . lbs of mounting torque under any mounting conditions.
Figure 25. Typical Mounting Techniques
for Isolated Package
Figure 25a. Screw–Mounted
Figure 25b. Clip–Mounted
MOUNTING INFORMATION**
** For more information about mounting power semiconductors see Application Note AN1040.
相關(guān)PDF資料
PDF描述
MJE18009BG 10 A, 450 V, NPN, Si, POWER TRANSISTOR
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MJE18009BU 10 A, 450 V, NPN, Si, POWER TRANSISTOR
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