參數(shù)資料
型號(hào)： MJE18008AS
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 8 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 12/65頁(yè)
文件大?。?/td> 503K
代理商： MJE18008AS
MJE18008 MJF18008
3–743
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)
VBE(sat)
—
0.82
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.2 Adc)
(TC = 125_C)
(IC = 4.5 Adc, IB = 0.9 Adc)
(TC = 125_C)
VCE(sat)
—
0.3
0.35
0.4
0.6
0.65
0.7
0.8
Vdc
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
14
—
6.0
5.0
11
10
—
28
9.0
8.0
15
16
20
34
—
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
—
13
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
100
150
pF
Input Capacitance (VEB = 8.0 V)
Cib
—
1750
2500
pF
Dynamic Saturation Voltage:
Determined 1 0
s and
(IC = 2.0 Adc
IB1 = 200 mAdc
1.0
s
(TC = 125°C)
VCE(dsat)
—
5.5
11.5
—
Vdc
Determined 1.0
s and
3.0
s respectively after
rising IB1 reaches 90% of
IB1 = 200 mAdc
VCC = 300 V)
3.0
s
(TC = 125°C)
—
3.5
6.5
—
g B1
final IB1
(see Figure 18)
(IC = 5.0 Adc
IB1 =1 0Adc
1.0
s
(TC = 125°C)
—
11.5
14.5
—
IB1 = 1.0 Adc
VCC = 300 V)
3.0
s
(TC = 125°C)
—
2.4
9.0
—
—
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
v 10%, Pulse Width = 20 s)
Turn–On Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc, VCC = 300 V)
(TC = 125°C)
ton
—
200
190
300
—
ns
Turn–Off Time
(TC = 125°C)
toff
—
1.2
1.5
2.5
—
s
Turn–On Time
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc, VCC = 300 V)
(TC = 125°C)
ton
—
100
250
180
—
ns
Turn–Off Time
(TC = 125°C)
toff
—
1.6
2.0
2.5
—
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H)
Fall Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc)
(TC = 125°C)
tfi
—
100
120
180
—
ns
Storage Time
(TC = 125°C)
tsi
—
1.5
1.9
2.75
—
s
Crossover Time
(TC = 125°C)
tc
—
250
230
350
—
ns
Fall Time
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc)
(TC = 125°C)
tfi
—
85
135
150
—
ns
Storage Time
(TC = 125°C)
tsi
—
2.0
2.6
3.2
—
s
Crossover Time
(TC = 125°C)
tc
—
210
250
300
—
ns
相關(guān)PDF資料
PDF描述
MJE18008BC 8 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18009BV 10 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18009BC 10 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18009AN 10 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18009AK 10 A, 450 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE18008G 功能描述:兩極晶體管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18009 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:POWER TRANSISTORS
MJE180G 功能描述:兩極晶體管 - BJT 3A 40V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE180PWD 功能描述:TRANSISTOR NPN 40V 3A RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
MJE180STU 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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