參數(shù)資料
型號： MJE18004D2AU
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 5 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 12/67頁
文件大?。?/td> 534K
代理商： MJE18004D2AU
MJE18004D2
3–725
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
450
547
Vdc
Collector–Base Breakdown Voltage
(ICBO = 1 mA)
VCBO
1000
1100
Vdc
Emitter–Base Breakdown Voltage
(IEBO = 1 mA)
VEBO
12
14
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
100
Adc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
ICES
100
500
100
Adc
Emitter–Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
100
Adc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25°C
@ TC = 125°C
VBE(sat)
0.8
0.7
1
0.9
Vdc
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.9
0.8
1
0.9
Collector–Emitter Saturation Voltage
@ TC = 25°C
@ TC = 125°C
VCE(sat)
0.38
0.55
0.5
0.75
Vdc
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.45
0.75
0.75
1
(IC = 0.8 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
0.9
1.6
1.5
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
0.25
0.28
0.5
0.6
DC Current Gain
(IC = 0.8 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
hFE
15
10
28
14
—
(IC = 2 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
6
4
8
6
(IC = 1 Adc, VCE = 2.5 Vdc)
@ TC = 25°C
@ TC = 125°C
18
14
28
20
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
IC = 1 Adc
IB1 = 100 mA
@ 1
s
@ TC = 25°C
@ TC = 125°C
VCE(dsat)
9
16
V
Dynamic Saturation
Voltage:
Determined 1
s and
IB1 = 100 mA
VCC = 300 V
@ 3
s
@ TC = 25°C
@ TC = 125°C
3.1
9
3
s respectively after
rising IB1 reaches
90% of final IB1
IC = 2 Adc
IB1 =0 4A
@ 1
s
@ TC = 25°C
@ TC = 125°C
11
18
90% of final IB1
IB1 = 0.4 A
VCC = 300 V
@ 3
s
@ TC = 25°C
@ TC = 125°C
1.4
8
相關(guān)PDF資料
PDF描述
MJE18004D2AS 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004D2AK 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004D2AJ 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004D2BV 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004D2BG 5 A, 450 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE18004D2G 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18004G 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18006 功能描述:兩極晶體管 - BJT 6A 450V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18006G 功能描述:兩極晶體管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18008 功能描述:兩極晶體管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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