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參數(shù)資料
| 型號： | MJE1320AK |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 12/63頁 |
| 文件大?。?/td> | 434K |
| 代理商： | MJE1320AK |
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MJE1320
3–621
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
VCEO(sus)
900
—
—
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
—
—
0.25
2.5
mAdc
Emitter Cutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
—
—
0.25
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 13
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 14
ON CHARACTERISTICS(1)
DC Current Gain (VCE = 5 Vdc)
IC = 2 Adc
IC = 1 Adc
hFE
2.5
3
4.5
7
—
—
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.5 Adc)
(IC = 2 Adc, IB = 1 Adc)
(IC = 1 Adc, IB = 0.5 Adc, TC = 100_C)
VCE(sat)
—
0.18
0.3
1
2.5
1.5
Vdc
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.5 Adc)
(IC = 2 Adc, IB = 1 Adc)
(IC = 1 Adc, IB = 0.5 Adc, TC = 100_C)
VBE(sat)
—
0.2
0.9
0.15
1.5
2.8
1.5
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
—
80
—
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
td
—
0.1
—
s
Rise Time
VCC = 250 Vdc, IC = 1 A
IB1 =IB2 =0 5Adc
tr
—
0.8
—
s
Storage Time
IB1 = IB2 = 0.5 Adc
tp = 25 s, Duty Cycle v 2%
ts
—
4
—
s
Fall Time
tf
—
0.8
—
s
Inductive Load, Clamped (Table 2)
Storage Time
TC =25_C
tsv
—
2.8
—
s
Crossover Time
I
1 A V
400 Vd
TC = 25_C
tc
—
2.2
—
s
Storage Time
IC = 1 A, Vclamp = 400 Vdc,
VBE(off) = 2 Vdc, IB1 = 0.5 Adc
tsv
—
3.7
10.5
s
Crossover Time
VBE(off) 2 Vdc, IB1 0.5 Adc
TC = 100_C
tc
—
3.5
10
s
Fall Time
(1) Pulse Test: Pulse Width = 300
s. Duty Cycle v 2%.
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| MJE1320AS | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
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