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參數(shù)資料
| 型號： | MJD253 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistor(互補型功率晶體管) |
| 中文描述： | 4 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 97K |
| 代理商： | MJD253 |
MJD243 (NPN), MJD253 (PNP)
http://onsemi.com
7
PACKAGE DIMENSIONS
DPAK3 (SINGLE GAUGE)
CASE 369D01
ISSUE B
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
4
V
S
A
K
T
SEATING
R
B
F
G
D
3 PL
M
0.13 (0.005)
T
C
E
J
H
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
MIN
0.235
0.250
0.086
0.027
0.018
0.037
0.090 BSC
0.034
0.018
0.350
0.180
0.025
0.035
0.155
MAX
0.245
0.265
0.094
0.035
0.023
0.045
MIN
5.97
6.35
2.19
0.69
0.46
0.94
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
MAX
6.35
6.73
2.38
0.88
0.58
1.14
MILLIMETERS
INCHES
0.040
0.023
0.380
0.215
0.040
0.050
1.01
0.58
9.65
5.45
1.01
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
ON Semiconductor
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
N. American Technical Support
: 8002829855 Toll Free
USA/Canada
Japan
: ON Semiconductor, Japan Customer Focus Center
291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone
: 81357733850
MJD243/D
LITERATURE FULFILLMENT
:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 850821312 USA
Phone
: 4808297710 or 8003443860 Toll Free USA/Canada
Fax
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Toll Free USA/Canada
Email
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ON Semiconductor Website
: http://onsemi.com
Order Literature
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For additional information, please contact your
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD253-001 | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD253-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications |
| MJD253-1G | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD253T4 | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD253T4G | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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