參數(shù)資料
型號(hào): MJ21294
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: NPN Silicon Power Transistor(NPN型硅功率晶體管)
中文描述: 20 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝: TO-3, 2 PIN
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 57K
代理商: MJ21294
MJ21294
http://onsemi.com
3
Figure 1. DC Current Gain
Figure 2. BaseEmitter Voltage
Figure 3. BaseEmitter Saturation Voltage
Figure 4. CollectorEmitter Saturation Voltage
hF
I
C
COLLECTOR CURRENT (AMPS)
TYPICAL CHARACTERISTICS
1000
100
10
100
10
1.0
0.1
T
J
= 100
°
C
25
°
C
25
°
C
V
CE
= 5 V
I
C
, COLLECTOR CURRENT (AMPS)
VB
1.8
1.0
0.2
100
10
1.0
0.1
T
J
= 25
°
C
V
CE
= 5 V
I
C
, COLLECTOR CURRENT (AMPS)
1.4
1.2
1.0
0.8
0.6
0.4
100
10
1.0
0.1
0.2
I
C
/I
B
= 10
Figure 5. Active Region Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
IC
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
V
CE
lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dis-
sipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200
°
C; T
C
is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
100
10
1.0
0.1
100
10
1000
DC
100 ms
1.2
0.4
1.4
0.6
1.6
0.8
25
°
C
100
°
C
T
J
= 25
°
C
25
°
C
100
°
C
VB
I
C
, COLLECTOR CURRENT (AMPS)
0.24
0.20
0.16
0.12
0.08
0.04
100
10
1.0
0.1
0.00
I
C
/I
B
= 10
T
J
= 25
°
C
25
°
C
100
°
C
VC
0.40
0.36
0.32
0.28
10 ms
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