參數(shù)資料
型號(hào)： MIMD10A-7
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
英文描述： DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT
中文描述： 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-6
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 83K
代理商： MIMD10A-7
DS30381 Rev. 5 - 2
2 of 3
MIMD10A
www.diodes.com
Characteristic
Symbol
V
l(off)
V
l(on)
V
O(on)
I
l
I
O(off)
G
l
Min
-0.3
Typ
Max
Unit
Test Condition
Input Voltage
V
V
CC
= -5V, I
O
= -100 A
V
O
= 0.3, I
O
= -100mA
I
O
= -100mA/-5mA
V
I
= -2V
V
CC
= -50V, V
I
= 0V
-1.5
-0.3
-25
-0.5
Output Voltage
Input Current
Output Current
DC Current Gain
-0.1
V
mA
A
68
Gain-Bandwidth Product*
f
T
200
MHz
V
= -10V, I
E
= -50mA,
f = 100MHz
Electrical Characteristics PNP Section Tr1
@ T
A
= 25 C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
* Transistor - For Reference Only
Electrical Characteristics NPN Section Tr2
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Min
50
50
5
Typ
Max
Unit
V
V
V
A
A
V
Test Condition
I
C
= 50 A
I
C
= 1mA
I
E
= 50 A
V
CB
= 50V
V
EB
= 4V
I
C
/I
B
= 10mA / 1.0mA
I
C
= 1mA, V
CE
= 5V
V
CE
= 10V, I
E
= -5mA, f = 100MHz
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
0.5
0.5
0.3
600
100
250
250
MHz
* Transistor - For Reference Only
Date Code Key
C73 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
C73
Y
Marking Information
Device
MIMD10A-7
Packaging
SOT-363
Shipping
3000/Tape & Reel
Ordering Information
(Note 3)
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Year
Code
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
4. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MIMD10-A-7-F.
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