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參數(shù)資料
| 型號(hào)： | MID150-12A4 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Modules Short Circuit SOA Capability Square RBSOA |
| 中文描述： | 180 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-7 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 120K |
| 代理商： | MID150-12A4 |
2000 IXYS All rights reserved
1 - 4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII 150-12 A4
MID 150-12 A4
MDI 150-12 A4
Symbol
Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 20 k
1200
1200
V
V
V
GES
V
GEM
Continuous
Transient
20
30
V
V
I
C25
I
C80
I
CM
T
C
= 25 C
T
C
= 80 C
T
C
= 80 C, t
p
= 1 ms
180
120
240
A
A
A
t
SC
(SCSOA)
V
GE
= ±15 V, V
CE
= V
CES
, T
J
= 125 C
R
G
= 10 , non repetitive
10
s
RBSOA
V
GE
= ±15 V, T
J
= 125 C, R
G
= 10
Clamped inductive load, L = 100 H
I
CM
= 200
V
CEK
< V
CES
A
P
tot
T
C
= 25 C
760
W
T
J
T
stg
150
C
C
-40 ... +150
V
ISOL
50/60 Hz, RMS
I
ISOL
1 mA
Insulating material: Al
2
O
3
t = 1 min
t = 1 s
4000
4800
V~
V~
M
d
Mounting torque (module)
2.25-2.75
20-25
2.5-3.7
22-33
Nm
lb.in.
Nm
lb.in.
(teminals)
d
S
d
A
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
10
9.6
50
mm
mm
m/s
2
Weight
Typical
250
8.8
g
oz.
Data according to a single IGBT/FRED unless otherwise stated.
8
9
1
2
3
11
10
10
11
9
8
2
1
3
MII
2
1
3
10
11
MID
2
1
3
9
8
MDI
E 72873
I
C25
V
CES
V
CE(sat) typ.
= 2.2 V
= 180 A
= 1200 V
Features
G
NPT IGBT technology
G
low saturation voltage
G
low switching losses
G
switching frequency up to 30 kHz
G
square RBSOA, no latch up
G
high short circuit capability
G
positive temperature coefficient for
easy parallelling
G
MOS input, voltage controlled
G
ultra fast free wheeling diodes
G
package with DCB ceramic base plate
G
isolation voltage 4800 V
G
UL registered E72873
Advantages
G
space and weight savings
G
reduced protection circuits
Typical Applications
G
AC and DC motor control
G
AC servo and robot drives
G
power supplies
G
welding inverters
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| MID200-12A4 | 功能描述:IGBT 模塊 200 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MID300-12A4 | 功能描述:IGBT 模塊 300 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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