參數(shù)資料
型號: MIC94051BM4
廠商: MICREL INC
元件分類: 功率晶體管
英文描述: 4-Terminal TinyFET⑩ P-Channel MOSFET
中文描述: 1800 mA, 6 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 2/5頁
文件大?。?/td> 42K
代理商: MIC94051BM4
MIC94050/94051
Absolute Maximum Ratings
Drain-to-Source Voltage................................................
6V
Gate-to-Source Voltage ................................................
6V
Continuous Drain Current
T
A
= 25
°
C (V
GS
= 4.5V)............................................1.8A
T
A
= 100
°
C (V
GS
= 4.5V)..........................................1.2A
Total Power Dissipation
T
A
= 25
°
C ............................................................568mW
T
A
= 100
°
C ..........................................................227mW
Operating Junction Temperature .............
40
°
C to +150
°
C
Storage Temperature ...............................
55
°
C to +150
°
C
ESD Rating,
Note 2
Micrel
MIC94050/94051
2
July 2002
Electrical Characteristics
(Note 1)
Symbol
Parameter
Condition (Note 1)
Min
Typ
Max
Units
V
GS
I
GSS
R
GS
C
ISS
I
DSS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
=
250
μ
A
V
DS
= 0V, V
GS
=
4.5V,
Note 2
,
Note 3
V
DS
= 0V, V
GS
=
4.5V,
Note 2
,
Note 4
V
GS
= 0V, V
DS
=
5.5V
V
DS
=
5.5V, V
GS
= 0V
V
DS
=
5.5V, V
GS
= 0V, T
J
= 85
°
C
V
GS
=
4.5V, I
D
=
100mA
V
GS
=
3.6V, I
D
=
100mA
V
GS
=
2.5V, I
D
=
100mA
V
GS
=
1.8V, I
D
=
100mA
V
DS
=
5.5V, I
D
=
200mA,
Note 5
0.5
1.2
V
Gate-Body Leakage
1
μ
A
Gate-Source Resistance
200
350
500
k
Input Capacitance
600
pF
Zero Gate Voltage Drain Current
1
μ
A
5
μ
A
R
DS(ON)
Drain-Source On-Resistance
0.125
0.135
0.165
0.225
0.160
0.180
0.200
0.280
g
FS
Forward Transconductance
3
S
Note 1.
Note 2.
T
A
= 25
°
C unless noted. Substrate connected to source for all conditions.
ESD gate protection diode conducts during positive gate-to-source voltage excursions. IC devices are inherently ESD sensitive. Handling
precautions required
MIC94050 only.
MIC94051 only.
Pulse Test: Pulse Width
80
μ
s, Duty Cycle
0.5%.
Note 3.
Note 4.
Note 5.
Operating Ratings
Thermal Resistance
θ
JA......................................................................................
220
°
C/W
θ
JC.....................................................................................
130
°
C/W
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