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參數(shù)資料
| 型號： | MIC94030BM4 |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | TinyFET⑩ P-Channel MOSFET Preliminary Information |
| 中文描述： | 1000 mA, 13.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-143, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | MIC94030BM4 |
MIC94030/94031
Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown or clarity.
Drain-to-Source Voltage (pulse)....................................16V
Gate-to-Source Voltage (pulse) ....................................16V
Continuous Drain Current
T
A
= 25
°
C ....................................................................1A
T
A
= 100
°
C ...............................................................0.5A
Operating Junction Temperature ............... –55
°
C to +150
°
Storage Temperature ............................... –55
°
C to +150
°
C
Micrel
6-42
1997
Electrical Characteristics
Voltage and current values are negative. Signs not shown for clarity.
Symbol
Parameter
Condition (Note 1)
Min
Typ
Max
Units
V
BDSS
V
GS
I
GSS
R
GS
C
ISS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 0V, V
GS
= 12V,
Note 2
,
Note 3
V
DS
= 0V, V
GS
= 12V,
Note 2
,
Note 4
V
GS
= 0V, V
DS
= 12V
V
DS
= 12V, V
GS
= 0V
V
DS
= 12V, V
GS
= 0V, T
J
= 125
°
C
V
DS
= 10V, V
GS
= 10V,
Note 5
V
GS
= 10V, I
D
= 100mA
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 2.7V, I
D
= 100mA
V
DS
= 10V, I
D
= 200mA,
Note 5
13.5
V
Gate Threshold Voltage
0.6
1.0
1.4
V
Gate-Body Leakage
1
μ
A
Gate-Source Resistor
500
750
1000
k
Input Capacitance
100
pF
Zero Gate Voltage Drain Current
25
μ
A
0.010
250
μ
A
I
D(ON)
R
DS(ON)
On-State Drain Current
6.3
A
Drain-Source On-State Resist.
0.45
0.75
1.20
1.00
g
FS
Note 1
Note 2
Note 3
Note 4
Note 5
Forward Transconductance
480
mS
T
A
= 25
°
C unless noted. Substrate connected to source for all conditions
ESD gate protection diode conducts during positive gate-to-source voltage excursions.
MIC94030 only
MIC94031 only
Pulse Test: Pulse Width
≤
80
μ
sec, Duty Cycle
≤
0.5%
Total Power Dissipation
T
A
= 25
°
C ............................................................568mW
T
A
= 100
°
C ..........................................................227mW
Thermal Resistance
θ
JA......................................................................................
220
°
C/W
θ
JC.....................................................................................
130
°
C/W
Lead Temperature
1/16"from case, 10s ........................................... +300
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC94030BM4 T&R | 制造商:Micrel Inc 功能描述:Dual P-Channel MOSFET |
| MIC94030BM4 TR | 功能描述:MOSFET P-CH 16V 1A SOT-143 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TinyFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MIC94030YM4 | 制造商:Rochester Electronics LLC 功能描述: 制造商:RF Micro Devices Inc 功能描述: |
| MIC94030YM4 TR | 功能描述:MOSFET Dual P-Channel MOSFET (Lead Free) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MIC94030YM4TR | 制造商:RF Micro Devices Inc 功能描述: |
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