參數(shù)資料
型號: MIC4421CN
廠商: MICREL INC
元件分類: 功率晶體管
英文描述: 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
中文描述: 9 A BUF OR INV BASED MOSFET DRIVER, PDIP8
封裝: PLASTIC, DIP-8
文件頁數(shù): 8/10頁
文件大?。?/td> 110K
代理商: MIC4421CN
MIC4421/4422
Micrel
April 1998
5-49
5
Table 1: MIC4421 Maximum
Operating Frequency
V
S
18V
15V
10V
5V
Conditions: 1.
θ
JA
= 150
°
C/W
2. T
A
= 25
°
C
3. C
L
= 10,000pF
Max Frequency
220kHz
300kHz
640kHz
2MHz
dissipation limit can easily be exceeded. Therefore, some
attention should be given to power dissipation when driving
low impedance loads and/or operating at high frequency.
The supply current vs. frequency and supply current vs
capacitive load characteristic curves aid in determining
power dissipation calculations. Table 1 lists the maximum
safe operating frequency for several power supply voltages
when driving a 10,000pF load. More accurate power dissi-
pation figures can be obtained by summing the three
dissipation sources.
Given the power dissipation in the device, and the thermal
resistance of the package, junction operating temperature
for any ambient is easy to calculate. For example, the
thermal resistance of the 8-pin plastic DIP package, from
the data sheet, is 130
°
C/W. In a 25
°
C ambient, then, using
a maximum junction temperature of 150
°
C, this package
will dissipate 960mW.
Accurate power dissipation numbers can be obtained by
summing the three sources of power dissipation in the
device:
Load Power Dissipation (P
L
)
Quiescent power dissipation (P
Q
)
Transition power dissipation (P
T
)
Calculation of load power dissipation differs depending on
whether the load is capacitive, resistive or inductive.
Resistive Load Power Dissipation
Dissipation caused by a resistive load can be calculated as:
P
L
= I
2
R
O
D
where:
I =
the current drawn by the load
the output resistance of the driver when the output is
high, at the power supply voltage used. (See data
sheet)
fraction of time the load is conducting (duty cycle)
R
O
=
D =
Figure 5. Switching Time Degradation Due to
Negative Feedback
MIC4421
1
8
6, 7
5
4
+18
0.1
μ
F
0.1
μ
F
TEK CURRENT
PROBE 6302
2,500 pF
POLYCARBONATE
5.0V
0 V
18 V
0 V
300 mV
6 AMPS
PC TRACE RESISTANCE = 0.05
LOGIC
GROUND
POWER
GROUND
WIMA
MKS-2
1
μ
F
Input Stage
The input voltage level of the MIC4421 changes the quies-
cent supply current. The N channel MOSFET input stage
transistor drives a 320
μ
A current source load. With a logic “1”
input, the maximum quiescent supply current is 400
μ
A. Logic
“0” input level signals reduce quiescent current to 80
μ
A
typical.
The MIC4421/4422 input is designed to provide 300mV of
hysteresis. This provides clean transitions, reduces noise
sensitivity, and minimizes output stage current spiking when
changing states. Input voltage threshold level is approxi-
mately 1.5V, making the device TTL compatible over the full
temperature and operating supply voltage ranges. Input
current is less than
±
10
μ
A.
The MIC4421 can be directly driven by the TL494, SG1526/
1527, SG1524, TSC170, MIC38C42, and similar switch
mode power supply integrated circuits. By offloading the
power-driving duties to the MIC4421/4422, the power supply
controller can operate at lower dissipation. This can improve
performance and reliability.
The input can be greater than the V
S
supply, however, current
will flow into the input lead. The input currents can be as high
as 30mA p-p (6.4mA
RMS
) with the input. No damage will
occur to MIC4421/4422 however, and it will not latch.
The input appears as a 7pF capacitance and does not change
even if the input is driven from an AC source. While the device
will operate and no damage will occur up to 25V below the
negative rail, input current will increase up to 1mA/V due to
the clamping action of the input, ESD diode, and 1k
resistor.
Power Dissipation
CMOS circuits usually permit the user to ignore power
dissipation. Logic families such as 4000 and 74C have
outputs which can only supply a few milliamperes of current,
and even shorting outputs to ground will not force enough
current to destroy the device. The MIC4421/4422 on the other
hand, can source or sink several amperes and drive large
capacitive loads at high frequency. The package power
相關(guān)PDF資料
PDF描述
MIC4421CT 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
MIC4427AM 100000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
MIC4426 100000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
MIC4426AM 100000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
MIC4426BM Dual 1.5A-Peak Low-Side MOSFET Driver
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MIC4421CT 功能描述:IC DRIVER MOSFET 9A LS TO-220-5 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC4421YM 功能描述:功率驅(qū)動器IC High Speed, 9A Low Side MOSFET Driver (Lead Free) RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MIC4421YM TR 功能描述:功率驅(qū)動器IC High Speed, 9A Low Side MOSFET Driver (Lead Free) RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MIC4421YM-TR 制造商:Micrel Inc 功能描述:
MIC4421YN 功能描述:功率驅(qū)動器IC High Speed, 9A Low Side MOSFET Driver (Lead Free) RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube