- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383610 > MIC4417BM4 (MICREL INC) IttyBitty⑩ Low-Side MOSFET Driver PDF資料下載
參數(shù)資料
| 型號： | MIC4417BM4 |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | IttyBitty⑩ Low-Side MOSFET Driver |
| 中文描述： | 1.2 A BUF OR INV BASED MOSFET DRIVER, PDSO4 |
| 封裝： | SOT-143, 4 PIN |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 107K |
| 代理商： | MIC4417BM4 |
April 1998
5-31
MIC4416
Micrel
5
Power Dissipation
The maximum power dissipation must not be exceeded to
prevent die meltdown or deterioration.
Power dissipation in on/off switch applications is negligible.
Fast repetitive switching applications, such as SMPS (switch-
mode power supplies), cause a significant increase in power
dissipation with frequency. Power is dissipated each time
current passes through the internal output MOSFETs when
charging or discharging the external MOSFET. Power is also
dissipated during each transition when some current momen-
tarily passes from VS to GND through both internal MOSFETs.
Power dissipation is the product of supply voltage and supply
current:
1)
P
D
= V
S
×
I
S
where:
P
D
= power dissipation (W)
V
S
= supply voltage (V)
I
S
= supply current (A) [see paragraph below]
Supply current is a function of supply voltage, switching
frequency, and load capacitance. Determine this value from
the “Typical Characteristics: Supply Current vs. Frequency”
graph or measure it in the actual application.
Do not allow P
D
to exceed P
D (max)
, below.
T
J
(junction temperature) is the sum of T
A
(ambient tempera-
ture) and the temperature rise across the thermal resistance
of the package. In another form:
2)
P
150
T
220
D
A
≤
where:
P
D (max)
= maximum power dissipation (W)
150 = absolute maximum junction temperature (
°
C)
T
A
= ambient temperature (
°
C) [68
°
F = 20
°
C]
220 = package thermal resistance (
°
C/W)
Maximum power dissipation at 20
°
C with the driver soldered
to a 0.25in
2
ground plane is approximately 600mW.
CTL
G
VS
GND
PCB heat sink/
ground plane
PCB traces
Figure 4. Heat-Sink Plane
The SOT-143 package
θ
JA
(junction-to-ambient thermal re-
sistance) can be improved by using a heat sink larger than the
specified 0.25in
2
ground plane. Significant heat transfer
occurs through the large (GND) lead. This lead is an
extension of the paddle to which the die is attached.
High-Frequency Operation
Although the MIC4416/7 driver will operate at frequencies
greater than 1MHz, the MOSFET’s capacitance and the load
will affect the output waveform (at the MOSFET’s drain).
For example, an MIC4416/IRL3103 test circuit using a 47
5W load resistor will produce an output waveform that closely
matches the input signal shape up to about 500kHz. The
same test circuit with a 1k
load resistor operates only up to
about 25kHz before the MOSFET source waveform shows
significant change.
VS
CTL
G
GND
MIC4416
+4.5V to 18V
4.7μF
1
3
2
4
Logic
Input
+5V
Logic-Level
MOSFET
IRL3103*
* 14m
logic-, 30V MOSFET,
GS
=
±
20V max.
0.1μF
Compare
47k
, 5W
to
1k
, 1/4W
loads
G
D
S
Slobserved at
MOSFET’s drain
Figure 5. MOSFET Capacitance Effects at High
Switching Frequency
When the MOSFET is driven off, the slower rise occurs
because the MOSFET’s output capacitance recharges through
the load resistance (RC circuit). A lower load resistance
allows the output to rise faster. For the fastest driver opera-
tion, choose the smallest power MOSFET that will safely
handle the desired voltage, current, and safety margin. The
smallest MOSFETs generally have the lowest capacitance.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MIC4416 | IttyBitty⑩ Low-Side MOSFET Driver |
| MIC4416BM4 | IttyBitty⑩ Low-Side MOSFET Driver |
| MIC4420BM | 6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4420BMM | 6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4420BN | 6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC4417BM4 TR | 功能描述:IC DRIVER MOSF LOW SIDE SOT143-4 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:IttyBitty® 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC4417BM4TR | 制造商:Micrel Inc 功能描述: |
| MIC4417YM4 | 制造商:Rochester Electronics LLC 功能描述: 制造商:RF Micro Devices Inc 功能描述: |
| MIC4417YM4 TR | 功能描述:功率驅(qū)動器IC Low Cost Low-Side MOSFET Driver, Non-Inverting - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC4417YM4TR | 制造商:Micrel 功能描述:MOSFET Driver 1.2A 1-Out Lo Side Inv |
發(fā)布緊急采購，3分鐘左右您將得到回復。