參數(shù)資料
型號: MH16D64AKQC-75
廠商: Mitsubishi Electric Corporation
元件分類: 圓形連接器
英文描述: Circular Connector; No. of Contacts:21; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-21 RoHS Compliant: No
中文描述: 1073741824位(16,777,216字64位),雙數(shù)據(jù)速率同步DRAM模塊
文件頁數(shù): 22/37頁
文件大?。?/td> 329K
代理商: MH16D64AKQC-75
MH16D64AKQC-75,-10
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0400-0.0
2.Nov.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
22
A precharge command can be issued at BL/2 from a read command without data loss.
Precharge all
Bank Activation and Precharge All (BL=8, CL=2)
Command
A0-9,11
A10
BA0,1
DQ
ACT
Xa
Xa
00
READ
Y
0
00
ACT
Xb
Xb
01
PRE
tRRD
tRCD
1
ACT
Xb
Xb
01
tRAS
tRP
tRCmin
2 ACT command / tRCmin
DQS
Q a
BL/2
OPERATIONAL DESCRIPTION
(Component Level)
BANK ACTIVATE
The DDR SDRAM has four independent banks. Each bank is activated by the ACT command
with the bank addresses (BA0,1). A row is indicated by the row address A11-0. The minimum
activation interval between one bank and the other bank is tRRD. Maximum 2 ACT commands
are allowed within tRC,although the number of banks which are active concurrently is not limited.
PRECHARGE
The PRE command deactivates the bank indicated by BA0,1. When multiple banks are active,
the precharge all command (PREA,PRE+A10=H) is available to deactivate them at the same
time. After tRP from the precharge, an ACT command to the same bank can be issued.
Q a
Q a
Q a
Q a
Q a
Q a
Q a
/CLK
CLK
相關PDF資料
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MH16M40AJD-6 FAST PAGE MODE ( 16,777,216-WORD BY 40-BIT ) DYNAMIC RAM
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