參數資料
型號: MGC15N35CL
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Internally Clamped N-Channel IGBT
中文描述: 15 A, 380 V, N-CHANNEL IGBT
封裝: DIE
文件頁數: 2/8頁
文件大小: 99K
代理商: MGC15N35CL
MGP15N35CL, MGB15N35CL, MGC15N35CL
http://onsemi.com
2
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ
Characteristic
150
°
C)
Symbol
Value
Unit
Single Pulse Collector–to–Emitter Avalanche Energy
VCC = 50 V, VGE = 5 V, Pk IL = 14.2 A, L = 3 mH, Starting TJ = 25
°
C
VCC = 50 V, VGE = 5 V, Pk IL = 10 A, L = 3 mH, Starting TJ = 150
°
C
THERMAL CHARACTERISTICS
EAS
300
150
mJ
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.0
°
C/W
Thermal Resistance, Junction to Ambient
TO–220
D2PAK
62.5
50
Maximum Lead Temperature for Soldering Purposes, 1/8
from case for 5 seconds
275
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
BVCES
IC = 2 mA
TJ = –40
°
C to 175
°
C
320
350
380
VDC
Zero Gate Voltage Collector Current
ICES
VCE = 300 V,
VGE = 0, TJ = 25
°
C
40
μ
ADC
VCE = 300 V,
VGE = 0, TJ = 150
°
C
200
Reverse Collector–Emitter Leakage Current
IECS
BVGES
IGES
RG
RGE
VCE = –24 V
IG = 5 mA
VGE = 10 V
1.0
mA
Gate–Emitter Clamp Voltage
17
22
VDC
μ
ADC
Gate–Emitter Leakage Current
384
1000
Gate Resistor (Optional)
70
Gate Emitter Resistor
10
26
k
ON CHARACTERISTICS*
Gate Threshold Voltage
VGE(th)
IC = 1 mA
VGE = VCE
1.0
1.8
2.1
VDC
Threshold Temperature Coefficient (Negative)
4.4
mV/
°
C
Collector–to–Emitter On–Voltage
VCE(on)
VCE(on)
IC = 6 A, VGE = 4 V
IC = 10 A,
VGE = 4.5 V,
TJ = 150
°
C
1.8
VDC
VDC
Collector–to–Emitter On–Voltage
1.8
Forward Transconductance
gfs
VCE = 5 V, IC = 6 A
8.0
15
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VCC = 15 V
1000
pF
Output Capacitance
COSS
CRSS
VGE = 0 V
f = 1 MHz
130
Transfer Capacitance
5.0
*Pulse Test: Pulse Width
300
μ
S, Duty Cycle
2%.
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