參數(shù)資料
型號： MF3060C-E3/4W
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
文件頁數(shù)： 3/5頁
文件大?。?/td> 143K
代理商： MF3060C-E3/4W
New Product
M3060C, MF3060C & MI3060C
Vishay General Semiconductor
Document Number: 89009
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
0.7
0.5
0.3
0.1
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
0.001
0.01
0.1
1
10
100
1000
10
20
30
40
60
80
70
50
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
T
J = 25 °C
T
J = 125 °C
T
J = 150 °C
100
1000
10 000
0.1
1
10
100
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Figure 6. Typical Transient Thermal Impedance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
0.1
1
10
100
0.01
0.1
1
10
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
M(I)3060C
Junction to Case
0.1
1
10
100
0.01
0.1
10
1
100
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
MF3060C
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