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參數(shù)資料
| 型號(hào)： | MDFB5122 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Fast Recovery Diode |
| 中文描述： | 2212 A, 2200 V, SILICON, RECTIFIER DIODE |
| 封裝： | CB486, 2 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 69K |
| 代理商： | MDFB5122 |
MDFB51
2/8
SURGE RATINGS
Conditions
Max.
Units
24.0
kA
2880 x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM,
T
j
= 150
o
C
19.2
kA
1843 x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 50% V
RRM,
T
j
= 150
o
C
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
o
C/W
-
0.021
Anode dc
Clamping force 44.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.03
Double side
-
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-
0.06
o
C/W
o
C/W
Cathode dc
-
0.023
o
C/W
Double side cooled
-
0.011
o
C/W
T
stg
Storage temperature range
–55
175
o
C
kN
44.0
40.0
Clamping force
-
T
vj
Virtual junction temperature
Foward (conducting)
-
150
o
C
Min.
CHARACTERISTICS
t
rr
100
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
μ
s, T
j
= 125
o
C
-
40
V
At T
vj
= 150
o
C
-
0.3
m
At T
vj
= 150
o
C
-
1.1
V
1.8
-
-
-
400
A
-
1000
μ
C
6.0
-
μ
s
At V
RRM
, T
case
= 150
o
C
-
mA
At 1500A peak, T
case
= 25
o
C
-
1.6
V
Conditions
Max.
I
F
= 1000A, di
RR
/dt = 100A/
μ
s
T
case
= 150
o
C, V
R
= 100V
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