參數(shù)資料
型號(hào)： MDD172-08N1
廠商： IXYS CORP
元件分類： 參考電壓二極管
英文描述： High Power Diode Modules
中文描述： 190 A, 800 V, SILICON, RECTIFIER DIODE
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 129K
代理商： MDD172-08N1
2000 IXYS All rights reserved
1 - 3
I
FRMS
= 2x 300 A
I
FAVM
= 2x 190 A
V
RRM
= 800-1800 V
Dimensions in mm (1 mm = 0.0394")
Symbol
I
R
V
F
V
T0
r
T
Q
S
I
RM
R
thJC
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 300 A; T
VJ
= 25 C
For power-loss calculations only
T
VJ
= T
VJM
T
VJ
= 125 C; I
F
= 300 A, -di/dt = 50 A/ s
Characteristic Values
20
mA
V
V
m
C
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
1.15
0.8
0.8
550
235
0.21
0.105
0.31
0.155
12.7
9.6
per diode; DC current
per module
per diode; DC current
per module
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
other values
see Fig. 6/7
R
thJK
d
S
d
A
a
50
V
RSM
V V
V
RRM
Type
900
1300
1500
1700
1900
800
1200
1400
1600
1800
MDD 172-08N1
MDD 172-12N1
MDD 172-14N1
MDD 172-16N1
MDD 172-18N1
Symbol
I
FRMS
I
FAVM
I
FSM
Test Conditions
T
VJ
= T
T
C
= 100 C; 180 sine
T
VJ
= 45 C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Maximum Ratings
300
190
6600
7290
5600
6200
218 000
221 000
157 000
160 000
-40...+150
150
-40...+125
3000
3600
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
120
A
A
A
A
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
i
2
dt
A
2
s
A
2
s
A
2
s
A
2
s
C
C
C
V~
V~
T
VJ
T
VJM
T
stg
V
ISOL
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
t = 1 min
t = 1 s
M
d
Weight
g
Features
G
International standard package
G
Direct copper bonded Al
2
O
3
-ceramic
base plate
G
Planar passivated chips
G
Isolation voltage 3600 V~
G
UL registered, E 72873
Applications
G
Supplies for DC power equipment
G
DC supply for PWM inverter
G
Field supply for DC motors
G
Battery DC power supplies
Advantages
G
Space and weight savings
G
Simple mounting
G
Improved temperature and power
cycling
G
Reduced protection circuits
MDD 172
High Power
Diode Modules
3
1
2
3
1
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
相關(guān)PDF資料
PDF描述
MDD172-12N1 High Power Diode Modules
MDD172-14N1 High Power Diode Modules
MDD172-16N1 High Power Diode Modules
MDD172-18N1 High Power Diode Modules
MDD220-18N1 High Power Diode Modules
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MDD172-12N1 功能描述:分立半導(dǎo)體模塊 172 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝:
MDD172-14N1 功能描述:分立半導(dǎo)體模塊 172 Amps 1400V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝:
MDD172-16N1 功能描述:分立半導(dǎo)體模塊 172 Amps 1600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝:
MDD172-18N1 功能描述:分立半導(dǎo)體模塊 STANDARD RECTIFIER 1800V 172A Y4-M6 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝:
MDD175-28N1 功能描述:SCR模塊 High Power Diode Modules RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK
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