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Analog Integrated Circuit Device Data
Freescale Semiconductor
7
33399
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions 7.0 V
VSUP 18 V, -40C TA 125C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
DIGITAL INTERFACE TIMING
Falling Edge
Rising Edge
tFALL
tRISE
0.75
2.0
3.0
V/
s
LIN Rise/Fall Symmetry (tRISE-tFALL)
tSYM
-2.0
—
2.0
s
Driver Propagation Delay
(8),
(9)TXD LOW-to-LIN LOW
TXD HIGH-to-LIN HIGH
tTXDLINL
tTXDLINH
0.0
—
4.0
s
Receiver Propagation Delay
(9),
(10)LIN LOW to RXD LOW
LIN HIGH to RXD HIGH
tRXDLINL
t RXDLINH
2.0
4.0
6.0
s
Receiver Propagation Delay Symmetry
tRECSYM
-2.0
—
2.0
s
Transmitter Propagation Delay Symmetry
tTRSYM
-2.0
—
2.0
s
LIN Bus Wake-up to INH HIGH
tPROPWL
45
70
130
s
Notess
6.
Measured between 20 and 80 percent of bus signal for 10 V <
VSUP < 18 V. Between 30 and 70 percent of signal for
7.0 V < VSUP < 10 V.
7.
8.
tTXDLINL is measured from TXD (HIGH-to-LOW) and LIN (VREC -0.2 V). tTXDLINH is measured from TXD (LOW-to-HIGH) and LIN
(VDOM + 0.2 V).
9.
10.
Measured between LIN receiver thresholds and RXD pin.
11.