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參數(shù)資料
| 型號： | MCT5210.SD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | SURFACE MOUNT, DIP-6 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 304K |
| 代理商： | MCT5210.SD |
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
Page 4 of 11
2003 Fairchild Semiconductor Corporation
MCT5200
MCT5201
MCT5210
MCT5211
**All typicals at TA = 25°C
Notes
1. DC Current Transfer Ratio (CTRCE) is dened as the transistor collector current (ICE) divided by the input LED current (IF) x
100%, at a specied voltage between the collector and emitter (VCE).
2. The collector base Current Transfer Ratio (CTRCB) is dened as the transistor collector base photocurrent(ICB) divided by the
input LED current (IF) time 100%.
3. Referring to Figure 14 the TPHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to
the 1.3V point on the falling edge of the output pulse.
4. Referring to Figure 14 the TPLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the
1.3V point on the rising edge of the output pulse.
5. Delay time (td) is measured from 50% of rising edge of LED current to 90% of Vo falling edge.
6. Rise time (tr) is measured from 90% to 10% of Vo falling edge.
7. Storage time (ts) is measured from 50% of falling edge of LED current to 10% of Vo rising edge.
8. Fall time (tf) is measured from 10% to 90% of Vo rising edge.
9. CISO is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected).
10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together.
Storage Time(7)
VCE = 0.4V,
RBE = 330 k,
RL = 1 k, VCC = 5V
IF = 10mA
ts
MCT5200
15
18
s
IF = 5mA
MCT5201
10
13
Fall Time(8)
VCE = 0.4V,
RBE = 330 k,
RL = 1 k, VCC = 5V
IF = 10mA
tf
MCT5200
16
30
s
IF = 5mA
MCT5201
16
30
TRANSFER CHARACTERISTICS (TA = 0°C to 70°C Unless otherwise specied.) (Continued)
DC Characteristics
Test Conditions
Symbol
Device
Min
Typ**
Max
Units
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCT5210SM | 功能描述:高速光耦合器 Phototrans LoCurrent RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
| MCT5210SVM | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR OUTPUT, SURFACE MOUNT LEAD BEND, VDE - Bulk |
| MCT5210TM | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR OUTPUT, 0.4 INCH LEAD BEND - Bulk |
| MCT5210TVM | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR OUTPUT, 0.4 INCH LEAD BEND, VDE - Bulk |
| MCT5210VM | 功能描述:高速光耦合器 6P DIP Optocoupler Phototrans LoCurrent RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
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