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參數(shù)資料
| 型號： | MCRF200IWF14D |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 125 kHz microID⑩ Passive RFID Device |
| 中文描述： | 125千赫microID⑩無源RFID器件 |
| 文件頁數(shù)： | 13/24頁 |
| 文件大小： | 294K |
| 代理商： | MCRF200IWF14D |
2003 Microchip Technology Inc.
DS21219H-page 13
MCRF200
6.0
FAILED DIE IDENTIFICATION
Every die on the wafer is electrically tested according
to the data sheet specifications and visually inspected
to detect any mechanical damage such as mechanical
cracks and scratches.
Any failed die in the test or visual inspection is identified
by black colored ink. Therefore, any die covered with
black ink should not be used.
The ink dot specification:
Ink dot size: minimum 20
μ
m x 20
μ
m
Position: central third of die
Color: black
7.0
WAFER DELIVERY
DOCUMENTATION
Each wafer container is marked with the following
information:
Microchip Technology Inc. MP Code
Lot Number
Total number of wafers in the container
Total number of good dice in the container
Average die per wafer (DPW)
Scribe number of wafers with number of good
dice
8.0
NOTICE ON DIE AND WAFER
HANDLING
The device is very susceptible to Electrostatic
Discharge (ESD). ESD can cause critical damage to
the device. Special attention is needed during the
handling process.
Any untraviolet (UV) light can erase the memory cell
contents of an unpackaged device. Flourescent lights
and sun light can also erase the memory cell although
it takes more time than UV lamps. Therefore, keep any
unpackaged devices out of UV light and also avoid
direct exposure from strong flourescent lights and sun
light.
Certain integrated circuit (IC) manufacturing, chip-on-
board (COB) and tag assembly operations may use UV
light. Operations such as backgrind, de-tape, certain
cleaning operations, epoxy or glue cure should be done
without exposing the die surface to UV light.
Using x-ray for die inspection will not harm the die, nor
erase memory cell contents.
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