參數(shù)資料
型號(hào)： MCRF200IWF08D
廠商： Microchip Technology Inc.
英文描述： 125 kHz microID⑩ Passive RFID Device
中文描述： 125千赫microID⑩無(wú)源RFID器件
文件頁(yè)數(shù)： 4/24頁(yè)
文件大?。?/td> 294K
代理商： MCRF200IWF08D
MCRF200
DS21219H-page 4
2003 Microchip Technology Inc.
2.0
FUNCTION DESCRIPTION
The device contains three major building blocks. They
are RF front-end, configuration and control logic, and
memory sections. The Block Diagram is shown on
page 1.
2.1
RF Front-End
The RF front-end of the device includes circuits for
rectification of the carrier, V
DD
(operating voltage) and
high-voltage clamping. This section also includes a
clock generator and modulation circuit.
2.1.1
RECTIFIER – AC CLAMP
The rectifier circuit rectifies RF voltage on the external
LC antenna circuit. Any excessive voltage on the tuned
circuit is clamped by the internal circuitry to a safe level
to prevent damage to the IC.
2.1.2
POWER-ON RESET
This circuit generates a Power-on Reset when the tag
first enters the reader field. The Reset releases when
sufficient power has developed on the V
DD
regulator to
allow correct operation.
2.1.3
CLOCK GENERATOR
This circuit generates a clock based on the carrier
frequency from the reader. This clock is used to derive
all timing in the device, including the baud rate and
modulation rate.
2.1.4
MODULATION CIRCUIT
The device sends the encoded data to the reader by
AM-modulating the coil voltage across the tuned LC
circuit. A modulation transistor is placed between the
two antenna coil pads (V
A
and V
B
). The transistor turns
on and off based on the modulation signal. As a result,
the amplitude of the antenna coil voltage varies with the
modulation signal. See Figure 2-1 for details.
FIGURE 2-1:
MODULATION SIGNAL AND MODULATED SIGNAL
MCRF200
V
A
Modulation
Signal
V
B
Modulation
Transistor
Modulation Signal
Modulated RF Signal
(across V
A
and V
B
)
L
C
Amplitude
t
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