參數(shù)資料
型號(hào)： MCR22-6
廠商： ON SEMICONDUCTOR
元件分類： 晶閘管
英文描述： Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管)
中文描述： 1.5 A, 400 V, SCR, TO-92
封裝： CASE 29-11, TO-226, 3 PIN
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 69K
代理商： MCR22-6
Semiconductor Components Industries, LLC, 2006
July, 2006 Rev. 5
1
Publication Order Number:
MCR226/D
MCR226, MCR228
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and low-power
switching applications.
Features
150 A for 2 s Safe Area
High dv/dt
Very Low Forward “On” Voltage at High Current
Low-Cost TO-226 (TO-92)
PbFree Packages are Available*
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(R
= IK, T
=
40 to +110
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR226
MCR228
V
DRM,
V
RRM
400
600
V
On-State Current RMS
(180
°
Conduction Angles, T
C
= 80
°
C)
I
T(RMS)
1.5
A
Peak Non-repetitive Surge Current,
@T
A
= 25
°
C, (1/2 Cycle, Sine Wave, 60 Hz)
I
TSM
15
A
Circuit Fusing Considerations (t = 8.3 ms)
I
2
t
0.9
A
2
s
Forward Peak Gate Power
(Pulse Width
≤
1.0 sec, T
A
= 25
°
C)
P
GM
0.5
W
Forward Average Gate Power
(t = 8.3 msec, T
A
= 25
°
C)
P
G(AV)
0.1
W
Forward Peak Gate Current
(Pulse Width
≤
1.0 s, T
A
= 25
°
C)
I
FGM
0.2
A
Reverse Peak Gate Voltage
(Pulse Width
≤
1.0 s, T
A
= 25
°
C)
Operating Junction Temperature Range
@ Rated V
RRM
and V
DRM
V
RGM
5.0
V
T
J
40 to +110
°
C
Storage Temperature Range
T
stg
40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
R
JA
T
L
50
°
C/W
Thermal Resistance, JunctiontoAmbient
160
°
C/W
°
C
Lead Solder Temperature
(Lead Length
1/16
″
from case, 10 S Max)
+260
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
and V
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
1.5 AMPERES RMS
400 thru 600 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
TO92 (TO226)
CASE 029
STYLE 10
1
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
K
G
A
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
MCR
22x
AYWW
MARKING DIAGRAMS
MCR22x =
Device Code
x = 6 or 8
= Assembly Location
= Year
= Work Week
= PbFree Package
A
Y
WW
(Note: Microdot may be in either location)
http://onsemi.com
相關(guān)PDF資料
PDF描述
MCR22-8 Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管)
MCR264-4 Silicon Controlled Rectifier Reverse Blocking Thyristor(40A，400V硅控整流器反向截止晶閘管)
MCR264-6 Silicon Controlled Rectifier Reverse Blocking Thyristor(40A，600V硅控整流器反向截止晶閘管)
MCR264-8 Silicon Controlled Rectifier Reverse Blocking Thyristor(40A，800V硅控整流器反向截止晶閘管)
MCR265-10 Silicon Controlled Rectifier Reverse Blocking Thyristor(55A，800V硅控整流器反向截止晶閘管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCR22-6_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR22-6G 功能描述:SCR 400V 1.5A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR22-6RLRA 功能描述:SCR 400V 1.5A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR22-6RLRAG 功能描述:SCR 400V 1.5A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR22-6RLRP 功能描述:SCR 400V 1.5A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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