參數(shù)資料
型號(hào): MCR12N
廠商: ON SEMICONDUCTOR
元件分類(lèi): 晶閘管
英文描述: Silicon Controlled Rectifiers
中文描述: 12 A, 800 V, SCR, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 92K
代理商: MCR12N
MCR12D, MCR12M, MCR12N
http://onsemi.com
3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode –
Forward Blocking Region
(off state)
IRRM at VRRM
90
°
180
°
Figure 1. Typical RMS Current Derating
Figure 2. On–State Power Dissipation
Figure 3. Typical On–State Characteristics
Figure 4. Typical Gate Trigger Current versus
Junction Temperature
8
0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
125
120
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
3
8
0
8
4
2
0
3.0
0.5
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
100
10
1
0.1
TJ, JUNCTION TEMPERATURE (
°
C)
–10
–40
20
2
0
2.5
T
(
I
T
G
115
105
1
2
3
1
2
6
10
20
1.0
2.0
20
50
80
125
°
,
,
dc
180
°
90
°
60
°
dc
30
°
MAXIMUM @ TJ = 25
°
C
MAXIMUM @ TJ = 125
°
C
5
1.5
4
5
110
4
100
90
95
6
7
12
14
6
7
12
9
10
11
30
°
12
9
10
11
16
18
5
35
65
95
–25
110
4
6
8
10
12
14
16
18
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