參數(shù)資料
型號: MCR12DSN
廠商: ON SEMICONDUCTOR
英文描述: Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管)
中文描述: 敏感柵硅(可控硅整流管控整流器)
文件頁數(shù): 5/7頁
文件大?。?/td> 73K
代理商: MCR12DSN
MCR12DSM, MCR12DSN
http://onsemi.com
5
Figure 9. Holding Current versus
GateCathode Resistance
1000
10 K
100
R
GK
, GATECATHODE RESISTANCE (OHMS)
10
6.0
4.0
2.0
0
I
H
T
J
= 25
°
C
Figure 10. Exponential Static dv/dt versus
GateCathode Resistance and Junction
Temperature
100
R
GK
, GATECATHODE RESISTANCE (OHMS)
1000
10
1.0
S
T
J
= 110
°
C
1000
I
GT
= 10 A
Figure 11. Exponential Static dv/dt versus
GateCathode Resistance and Peak Voltage
S
Figure 12. Exponential Static dv/dt versus
GateCathode Resistance and Gate Trigger
Current Sensitivity
8.0
I
GT
= 25 A
,
100
90
°
C
70
°
C
100
R
GK
, GATECATHODE RESISTANCE (OHMS)
1000
10
1.0
T
J
= 110
°
C
1000
100
V
PK
= 800 V
600 V
400 V
100
R
GK
, GATECATHODE RESISTANCE (OHMS)
1000
10
1.0
V
D
= 800 V
T
J
= 110
°
C
1000
100
I
GT
= 10 A
S
I
GT
= 25 A
ORDERING INFORMATION
Device
Package Type
Package
Shipping
MCR12DSMT4
DPAK
369C
2500 / Tape & Reel
MCR12DSMT4G
DPAK
(PbFree)
369C
2500 / Tape & Reel
MCR12DSN001
DPAK3
369D
75 Units / Rail
MCR12DSN001G
DPAK3
(PbFree)
369D
75 Units / Rail
MCR12DSNT4
DPAK
369C
2500 / Tape & Reel
MCR12DSNT4G
DPAK
(PbFree)
369C
2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
MCR12LD Silicon Controlled Rectifiers(可控硅整流管)
MCR12LM Silicon Controlled Rectifiers(可控硅整流管)
MCR12LN Silicon Controlled Rectifiers(可控硅整流管)
MCR12 Silicon Controlled Rectifiers( 可控硅整流器)
MCR16N Silicon Controlled Rectifiers(可控硅整流管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCR12DSN-001 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR12DSN-001G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSN-1G 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR12DSNT4 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR12DSNT4G 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube