參數(shù)資料
型號: MCR100
廠商: ON SEMICONDUCTOR
英文描述: Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管)
中文描述: 敏感柵硅(可控硅整流管控整流器)
文件頁數(shù): 4/6頁
文件大?。?/td> 65K
代理商: MCR100
MCR100 Series
http://onsemi.com
4
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
100
90
80
70
60
50
40
30
110
50
35
20
5
10
25
40
G
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
110
65
50
35
20
5
10
25
40
0.8
0.7
0.6
0.5
0.4
0.3
G
0.2
20
10
0.9
1.0
95
80
65
95
80
DC
Figure 3. Typical Holding Current versus
Junction Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
1000
100
110
65
50
35
20
5
10
25
40
H
Figure 4. Typical Latching Current versus
Junction Temperature
10
Figure 5. Typical RMS Current Derating
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
120
110
100
90
80
70
60
50
0.5
0.4
0.3
0.2
0.1
0
T
°
Figure 6. Typical OnState Characteristics
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
3.5
3.2
2.3
2.0
1.7
1.4
1.1
0.8
0.5
1
I
0.1
40
10
95
80
T
J
, JUNCTION TEMPERATURE (
°
C)
1000
100
110
65
50
35
20
5
10
25
40
L
10
95
80
30
°
60
°
90
°
120
°
180
°
2.9
2.6
MAXIMUM @ T
J
= 110
°
C
MAXIMUM @ T
J
= 25
°
C
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MCR12DSM Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管)
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相關代理商/技術參數(shù)
參數(shù)描述
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MCR100-003 功能描述:SCR 100V 800mA RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube