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參數資料
| 型號： | MCP6561RT-E/OT |
| 廠商： | Microchip Technology |
| 文件頁數： | 8/14頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC COMP PUSH-PULL 1.8V SOT23-5 |
| 產品培訓模塊： | MCP656x |
| 標準包裝： | 1 |
| 類型： | 通用 |
| 元件數： | 1 |
| 輸出類型： | CMOS，推挽式，滿擺幅，TTL |
| 電壓 - 電源，單路/雙路(±)： | 1.8 V ~ 5.5 V |
| 電壓 - 輸入偏移（最小值）： | 10mV @ 5.5V |
| 電流 - 輸入偏壓（最小值）： | 1pA @ 5.5V |
| 電流 - 輸出（標準）： | 50mA |
| 電流 - 靜態(tài)（最大值）： | 130µA |
| CMRR, PSRR（標準）： | 66dB CMRR，70dB PSRR |
| 傳輸延遲（最大）： | 80ns |
| 磁滯： | 5mV |
| 工作溫度： | -40°C ~ 125°C |
| 封裝/外殼： | SC-74A，SOT-753 |
| 安裝類型： | 表面貼裝 |
| 包裝： | 標準包裝 |
| 產品目錄頁面： | 681 (CN2011-ZH PDF) |
| 其它名稱： | MCP6561RT-E/OTDKR |
2009 Microchip Technology Inc.
DS22139B-page 3
MCP6561/1R/1U/2/4
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
VDD - VSS ....................................................................... 6.5V
All other inputs and outputs............VSS - 0.3V to VDD + 0.3V
Difference Input voltage ......................................|VDD - VSS|
Output Short Circuit Current .................................... ±25 mA
Current at Input Pins .................................................. ±2 mA
Current at Output and Supply Pins .......................... ±50 mA
Storage temperature ................................... -65°C to +150°C
Ambient temp. with power applied .............. -40°C to +125°C
Junction temp............................................................ +150°C
ESD protection on all pins (HBM/MM)
..................≥ 4 kV/300V
*Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS,
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Power Supply
Supply Voltage
VDD
1.8
—
5.5
V
Quiescent Current per comparator
IQ
60
100
130
A
IOUT = 0
Power Supply Rejection Ratio
PSRR
63
70
—
dB
VCM = VSS
Input
Input Offset Voltage
VOS
-10
±3+10
mV
Input Offset Drift
ΔV
OS/ΔT—
±2—
V/°C
VCM = VSS
Input Offset Current
IOS
—
±1—
pA
VCM = VSS
Input Bias Current
IB
—1
—
pA
TA = +25°C, VIN- = VDD/2
—60
—
pA
TA = +85°C, VIN- = VDD/2
—
1500
5000
pA
TA = +125°C, VIN- = VDD/2
Input Hysteresis Voltage
VHYST
1.0
—
5.0
mV
Input Hysteresis Linear Temp. Co.
TC1
—10
—
V/°C
Input Hysteresis Quadratic Temp.
Co.
TC2
—0.3
—
V/°C2
Common-Mode Input Voltage
Range
VCMR
VSS0.2
—
VDD+0.2
V
VDD = 1.8V
VSS0.3
—
VDD+0.3
V
VDD = 5.5V
Common-Mode Rejection Ratio
CMRR
54
66
—
dB
VCM= -0.3V to VDD+0.3V, VDD = 5.5V
50
63
—
dB
VCM= VDD/2 to VDD+0.3V, VDD = 5.5V
54
65
—
dB
VCM= -0.3V to VDD/2, VDD = 5.5V
Common Mode Input Impedance
ZCM
—1013||4
—
Ω||pF
Differential Input Impedance
ZDIFF
—1013||2
—
Ω||pF
Push-Pull Output
High Level Output Voltage
VOH
VDD0.7
—
V
IOUT = -3 mA/-8 mA with VDD = 1.8V/5.5V
Low Level Output Voltage
VOL
——0.6
V
IOUT = 3mA/8mA with VDD = 1.8V/5.5V
Short Circuit Current
ISC
—±30
—
mA
Output Pin Capacitance
COUT
—8
—
pF
Note
1:
The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
2:
VHYST at different temperatures is estimated using VHYST (TA) = VHYST @ +25°C + (TA - 25°C) TC1 + (TA - 25°C)
2 TC
2.
3:
Limit the output current to Absolute Maximum Rating of 50 mA.
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