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2006 Microchip Technology Inc.
DS21989A-page 3
MCP1256/7/8/9
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
Power Supply Voltage, V
IN
...............................................3.8V
Voltage on Any Pin w.r.t. GND ................. -0.3V to (V
IN
+0.3V)
Output Short Circuit Duration ................................continuous
Storage Temperature Range.........................-65°C to +150°C
Ambient Temperature with Power Applied....-55°C to +125°C
Maximum Junction Temperature.................................+150°C
ESD protection on all pins
Human Body Model (1.5 k
Ω
in Series with 100 pF)
.......≥
2 kV
Machine Model (200 pF, No Series Resistance).............200V
DC CHARACTERISTICS
Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Electrical Specifications:
Unless otherwise indicated, all limits apply for V
IN
= 1.8V to 3.6V, SHDN = V
IN
, C
IN
=
C
OUT
=
10
μ
F,
C
1
=
C
2
=
1
μ
F, I
OUT
=
10 mA, T
J
= -40°C to +125°C. Typical values are at T
J
= +25°C.
Parameters
Sym
Min
Typ
Max
Unit
s
Conditions
ALL DEVICES
Supply Voltage
V
IN
V
OUT
V
OUT
I
OUT(MAX)
1.8
—
3.6
V
Output Voltage
—
3.3
—
V
Output Voltage Accuracy
-3.0
±0.5
+3.0
%
I
OUT
= 10 mA to I
OUT(MAX)
1.8V < V
IN
< 2.0V
2.0V < V
IN
< 2.2V
2.2V < V
IN
< 3.6V
V
OUT
= 0V, V
IN
= 1.8V to 3.6V
V
IN
= 1.8V, I
OUT
= 10 mA
V
IN
= 1.8V, I
OUT
= 50 mA
V
IN
= 2.0V, I
OUT
= 10 mA
V
IN
= 2.0V, I
OUT
= 50 mA
V
IN
= 2.4V, I
OUT
= 10 mA
V
IN
= 2.4V, I
OUT
= 50 mA
V
IN
= 2.4V, I
OUT
= 100 mA
V
IN
= 2.8V, I
OUT
= 10 mA
V
IN
= 2.8V, I
OUT
= 50 mA
V
IN
= 2.8V, I
OUT
= 100 mA
V
IN
= 3.0V, I
OUT
= 10 mA
V
IN
= 3.0V, I
OUT
= 50 mA
V
IN
= 3.0V, I
OUT
= 100 mA
Output Current
30
—
—
mA
70
—
—
mA
100
—
—
mA
Short Circuit Current
I
SC
η
—
150
—
mA
Power Efficiency
—
84.5
—
%
—
84.5
—
%
—
76.4
—
%
—
80.1
—
%
—
64.0
—
%
—
67.1
—
%
—
67.5
—
%
—
69.7
—
%
—
76.0
—
%
—
76.7
—
%
—
65.0
—
%
—
71.0
—
%
—
71.6
—
%
Shutdown Input - SHDN
SHDN Input Voltage Low
V
IL(SHDN)
V
IH(SHDN)
I
LK(SHDN)
—
—
0.4
V
SHDN Input Voltage High
1.4
—
—
V
SHDN Input Leakage
Current
—
0.001
0.1
μ
A
SHDN Quiescent Current
I
Q
—
0.25
2
μ
A
V
SHDN
= 0V, T
J
= +25°C
Thermal Shutdown
Thermal Shutdown
Threshold
T
J
—
160
—
°
C
Thermal Shutdown
Hysteresis
T
J(HYS)
—
15
—
°
C