
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
44
Freescale Semiconductor
Electrical Characteristics
AC electrical characteristics in DDR mobile for Fast mode and ovdd=1.65-1.95V, ipp_hve=0 are placed in
Output Pad di/dt1
di/dt
—
82
40
19
mA/ns
Input Pad Transition Times2
trfi
1.2 pF
0.09/0.09
0.132/0.128
0.212/0.213
ns
Input Pad Propagation Delay (DDR input),
50%-50%2
tpi
1.2 pF
0.3/0.36
0.5/0.52
0.82/0.94
ns
Maximum Input Transition Times3
trm
—
5
ns
1 Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5=101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,
IO 1.95 V, -40 °C and s0-s5=000000.
2 Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO 1.8
V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and -40 °C.
3 Hysteresis mode is recommended for input with transition time greater than 25 ns.
Table 43. AC Electrical Characteristics of DDR_clk mobile IO Pads for Fast mode
and ovdd=1.65–1.95V (ipp_hve=0)
Parameter
Symbol
Test
Condition
Min
rise/fall
Typ
Max
rise/fall
Units
Output Pad Transition Times (High Drive)1
tpr
15pF
35pF
1.35/1.32
3.01/2.96
1.03/1.03
2.29/2.30
0.89/0.89
1.84/1.92
ns
Output Pad Transition Times (Medium Drive)1
tpr
15pF
35pF
1.98/1.98
4.52/4.38
1.55/1.54
3.46/3.45
1.29/1.30
2.80/2.88
ns
Output Pad Transition Times (Low Drive)1
tpr
15pF
35pF
3.99/3.94
8.93/8.86
3.10/3.04
6.77/6.85
2.50/2.57
5.40/5.68
ns
Output Pad Propagation Delay (High Drive)1
tpo
15pF
35pF
1.60/1.58
2.74/2.81
1.85/1.74
2.71/2.67
2.58/2.31
3.26/3.08
ns
Output Pad Propagation Delay (Medium Drive)1
tpo
15pF
35pF
2.07/2.08
3.79/3.92
2.19/2.12
3.46/3.51
2.86/2.62
3.87/3.77
ns
Output Pad Propagation Delay (Low Drive)1
tpo
15pF
35pF
3.47/3.57
6.94/7.26
3.23/3.25
5.84/6.06
3.69/3.55
5.73/5.87
ns
Output Pad Slew Rate (High Drive)1
tps
15pF
35pF
0.87/0.89
0.39/0.40
1.05/1.05
0.47/0.47
1.11/1.11
0.54/0.52
V/ns
Output Pad Slew Rate (Medium Drive)1
tps
15pF
35pF
0.59/0.59
0.26/0.27
0.70/0.70
0.31/0.31
0.77/0.76
0.35/0.34
V/ns
Output Pad Slew Rate (Low Drive)1
tps
15pF
35pF
0.29/0.30
0.13/0.13
0.35/0.36
0.16/0.16
0.40/0.39
0.18/0.17
V/ns
Output Pad di/dt (High Drive)1
di/dt
—
185
91
46
mA/ns
Output Pad di/dt (Medium drive)1
di/dt
—
124
61
31
mA/ns
Table 42. AC Electrical Characteristics of DDR2_clk IO Pads for Slow mode and for
ovdd=1.65 – 1.95 V (ipp_hve=0) (continued)
Parameter
Symbol
Test
Condition
Min
rise/fall
Typ
Max
rise/fall
Units