參數(shù)資料
型號(hào)： MCIMX355AVM4BR2
廠商： Freescale Semiconductor
文件頁數(shù)： 61/147頁
文件大?。?/td> 0K
描述： IC MPU I.MX35 400MAPBGA
標(biāo)準(zhǔn)包裝： 1,000
系列： i.MX35
核心處理器： ARM11
芯體尺寸： 32-位
速度： 400MHz
連通性： 1 線，CAN，EBI/EMI，以太網(wǎng)，I²C，MMC，SPI，SSI，UART/USART，USB OTG
外圍設(shè)備： DMA，I²S，LCD，POR，PWM，WDT
輸入/輸出數(shù)： 96
程序存儲(chǔ)器類型： ROMless
RAM 容量： 128K x 8
電壓 - 電源 (Vcc/Vdd)： 1.22 V ~ 1.47 V
振蕩器型： 外部
工作溫度： -40°C ~ 85°C
封裝/外殼： 400-LFBGA
包裝： 帶卷 (TR)
i.MX35 Applications Processors for Automotive Products, Rev. 10
Freescale Semiconductor
20
The method for obtaining max current is as follows:
1. Measure worst case power consumption on individual rails using directed test on i.MX35.
2. Correlate worst case power consumption power measurements with worst case power
consumption simulations.
3. Combine common voltage rails based on power supply sequencing requirements
4. Guard band worst case numbers for temperature and process variation. Guard band is based on
process data and correlated with actual data measured on i.MX35.
5. The sum of individual rails is greater than real world power consumption, as a real system does
not typically maximize power consumption on all peripherals simultaneously.
4.6
Thermal Characteristics
The thermal resistance characteristics for the device are given in Table 12. These values were measured
under the following conditions:
Two-layer substrate
Substrate solder mask thickness: 0.025 mm
Substrate metal thicknesses: 0.016 mm
Substrate core thickness: 0.200 mm
Core via I.D: 0.168 mm, Core via plating 0.016 mm.
Full array map design, but nearly all balls under die are power or ground.
Die Attach: 0.033 mm non-conductive die attach, k = 0.3 W/m K
Mold compound: k = 0.9 W/m K
Table 11. Power Consumption
Power Supply
Voltage (V)
Max Current (mA)
QVCC
1.47
400
MVDD, PVDD
1.65
20
NVCC_EMI1, NVCC_EMI2, NVCC_EMI3, NVCC_LCDC, NVCC_NFC
1.9
90
FUSE_VDD1
1 This rail is connected to ground; it only needs a voltage if eFuses are to be programmed. FUSE_VDD should be supplied by
following the power up sequence given in Section 4.3.1, “Powering Up.”
3.6
62
NVCC_MISC, NVCC_CSI, NVCC_SDIO, NVCC_CRM, NVCC_ATA, NVCC_MLB,
NVCC_JTAG
3.6
60
OSC24M_VDD, OSC_AUDIO_VDD, PHY1_VDDA, PHY2_VDD,
USBPHY1_UPLLVDD, USBPHY1_VDDA_BIAS
3.6
25
Table 12. Thermal Resistance Data
Rating
Condition
Symbol
Value
Unit
Junction to ambient1 natural convection
Single layer board (1s)
ReJA
53
C/W
Junction to ambient1 natural convection
Four layer board (2s2p)
ReJA
30
C/W
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MCIMX355AVM5B 功能描述:處理器 - 專門應(yīng)用 RINGO MX35 TO2 RoHS:否 制造商:Freescale Semiconductor 類型:Multimedia Applications 核心:ARM Cortex A9 處理器系列:i.MX6 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:1 GHz 指令/數(shù)據(jù)緩存: 數(shù)據(jù) RAM 大小:128 KB 數(shù)據(jù) ROM 大小: 工作電源電壓: 最大工作溫度:+ 95 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MAPBGA-432
MCIMX355AVM5BR2 功能描述:處理器 - 專門應(yīng)用 RINGO MX35 TO2 RoHS:否 制造商:Freescale Semiconductor 類型:Multimedia Applications 核心:ARM Cortex A9 處理器系列:i.MX6 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:1 GHz 指令/數(shù)據(jù)緩存: 數(shù)據(jù) RAM 大小:128 KB 數(shù)據(jù) ROM 大小: 工作電源電壓: 最大工作溫度:+ 95 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MAPBGA-432
MCIMX356AJM5B 功能描述:開發(fā)板和工具包 - ARM RINGO MX35 TO2 RoHS:否 制造商:Arduino 產(chǎn)品:Development Boards 工具用于評(píng)估:ATSAM3X8EA-AU 核心:ARM Cortex M3 接口類型:DAC, ICSP, JTAG, UART, USB 工作電源電壓:3.3 V
MCIMX356AJM5BR2 功能描述:處理器 - 專門應(yīng)用 RINGO MX35 TO2 RoHS:否 制造商:Freescale Semiconductor 類型:Multimedia Applications 核心:ARM Cortex A9 處理器系列:i.MX6 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:1 GHz 指令/數(shù)據(jù)緩存: 數(shù)據(jù) RAM 大小:128 KB 數(shù)據(jù) ROM 大小: 工作電源電壓: 最大工作溫度:+ 95 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MAPBGA-432
MCIMX356AJQ4C 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:i.MX35 Applications Processors for Automotive Products
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