參數(shù)資料
型號(hào): MCH5803
廠(chǎng)商: Sanyo Electric Co.,Ltd.
英文描述: DC / DC Converter Applications
中文描述: 直流/直流轉(zhuǎn)換器應(yīng)用
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 48K
代理商: MCH5803
MCH5803
No.6958-2/5
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=
±
16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=700mA
ID=700mA, VGS=10V
ID=400mA, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
IS=1.4A, VGS=0
30
V
μ
A
μ
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
1
±
10
2.6
1.2
0.85
1.2
230
370
70
15
10
Static Drain-to-Source On-State Resistance
300
520
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
6
3
10
4
2.6
0.6
0.5
0.9
1.2
VR
VF1
VF2
IR
C
trr
IR=0.5mA
IF=0.3A
IF=0.5A
VR=10V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
30
V
V
V
μ
A
pF
ns
Forward Voltage
0.35
0.42
0.40
0.47
200
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
20
10
Electrical Connection
(Top view)
Switching Time Test Circuit
[MOSFET]
trr Test Circuit
[SBD]
PW=10
μ
s
D.C.
1%
P.G
50
G
S
D
ID=700mA
RL=21.4
VDD=15V
VOUT
MCH5803
VIN
10V
0V
VIN
Duty
10%
50
100
10
--5V
trr
1
1
10mA
10
μ
s
G
S
A
D
C
G : Gate
S : Source
A : Anode
C : Cathode
D : Drain
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