參數(shù)資料
型號： MCF51QE96CLH
廠商： Freescale Semiconductor
文件頁數(shù)： 24/38頁
文件大?。?/td> 0K
描述： IC MCU 32BIT 96K FLASH 64-LQFP
產(chǎn)品培訓(xùn)模塊： Flexis QE Series Low Power Features
標(biāo)準(zhǔn)包裝： 160
系列： MCF51QE
核心處理器： Coldfire V1
芯體尺寸： 32-位
速度： 50MHz
連通性： I²C，SCI，SPI
外圍設(shè)備： LVD，PWM，WDT
輸入/輸出數(shù)： 54
程序存儲器容量： 96KB（96K x 8）
程序存儲器類型： 閃存
RAM 容量： 8K x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 20x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 64-LQFP
包裝： 托盤
MCF51QE128 Series Data Sheet, Rev. 7
Electrical Characteristics
Freescale Semiconductor
30
3.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory section of the MCF51QE128 Reference Manual.
Table 19. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
-40
°C to 85°CV
prog/erase
1.8
3.6
V
D
Supply voltage for read operation
VRead
1.8
3.6
V
D
Internal FCLK frequency1
1 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
56.67
μs
P
Longword program time (random location)(2)
tprog
9tFcyc
P
Longword program time (burst mode)(2)
tBurst
4tFcyc
P
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
P
Mass erase time(2)
tMass
20,000
tFcyc
Longword program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures
with VDD = 3.0 V, bus frequency = 4.0 MHz.
RIDDBP
—9.7
—
mA
Page erase current3
RIDDPE
—7.6
—
mA
C
Program/erase endurance4
TL to TH = –40°C to + 85°C
T = 25
°C
4 Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on
how Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
10,000
—
100,000
—
cycles
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCF51QE96CLK 功能描述:32位微控制器 - MCU 32 BIT ; 96K FLASH RoHS:否 制造商:Texas Instruments 核心:C28x 處理器系列:TMS320F28x 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:90 MHz 程序存儲器大小:64 KB 數(shù)據(jù) RAM 大小:26 KB 片上 ADC:Yes 工作電源電壓:2.97 V to 3.63 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:LQFP-80 安裝風(fēng)格:SMD/SMT
MCF51QH128 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C
MCF51QH128VHS 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C
MCF51QH128VHX 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C
MCF51QH32VFM 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C
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