參數(shù)資料
型號: MC9S08QA2CPAE
廠商: Freescale Semiconductor
文件頁數(shù): 30/32頁
文件大?。?/td> 0K
描述: IC MCU 8BIT 2K FLASH 8-DIP
產(chǎn)品培訓模塊: 8-Bit Microcontroller Overview
標準包裝: 50
系列: S08
核心處理器: S08
芯體尺寸: 8-位
速度: 20MHz
外圍設(shè)備: LVD,POR,PWM,WDT
輸入/輸出數(shù): 4
程序存儲器容量: 2KB(2K x 8)
程序存儲器類型: 閃存
RAM 容量: 160 x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 4x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 8-DIP(0.300",7.62mm)
包裝: 管件
產(chǎn)品目錄頁面: 728 (CN2011-ZH PDF)
Electrical Characteristics
MC9S08QA4 Series MCU Data Sheet, Rev. 3
Freescale Semiconductor
7
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
3.5
DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 4. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
3
Machine
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
Table 5. ESD and Latch-Up Protection Characteristics
No.
Rating1
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
±2000
V
2
Machine model (MM)
VMM
±200
V
3
Charge device model (CDM)
VCDM
±500
V
4
Latch-up current at TA = 85°CILAT
±100
mA
Table 6. DC Characteristics (Temperature Range = –40 to 85
°C Ambient)
Parameter
Symbol
Min
Typical
Max
Unit
Supply voltage (run, wait, and stop modes)
V
(VDD falling)
VDD
1.8
3.6
(VDD rising)
VLVDL
(rising)
—3.6
Minimum RAM retention supply voltage applied to VDD
VRAM
Vpor
1,2
——
V
Low-voltage detection threshold
(VDD falling)
VLVD
1.80
1.82
1.91
V
(VDD rising)
1.88
1.90
1.99
Low-voltage warning threshold
(VDD falling)
VLVW
2.08
2.1
2.2
V
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