參數(shù)資料
型號: MC9S08MP16VLC
廠商: Freescale Semiconductor
文件頁數(shù): 27/36頁
文件大?。?/td> 0K
描述: MCU 8BIT .25U SGF FLASH 32-LQFP
標(biāo)準(zhǔn)包裝: 250
系列: S08
核心處理器: S08
芯體尺寸: 8-位
速度: 51.34MHz
連通性: I²C,LIN,SCI,SPI
外圍設(shè)備: LVD,POR,PWM,WDT
輸入/輸出數(shù): 25
程序存儲器容量: 16KB(16K x 8)
程序存儲器類型: 閃存
RAM 容量: 1K x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 13x12b,D/A 3x5b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 105°C
封裝/外殼: 32-LQFP
包裝: 托盤
Electrical Characteristics
MC9S08MP16 Series Data Sheet, Rev. 2
Freescale Semiconductor
33
2.15
Flash Memory Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory section.
2.16
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
2.16.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
Table 20. Flash Memory Characteristics
Num
C
Characteristic
Symbol
Min
Typical
Max
Unit
1
Supply voltage for program/erase
-40
C to 125CV
prog/erase
2.7
5.5
V
2
Supply voltage for read operation
VRead
2.7
5.5
V
3
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
4
Internal FCLK period (1/FCLK)
tFcyc
56.67
s
5
C
Byte program time (random location)2
tprog
9tFcyc
6
Byte program time (burst mode)2
tBurst
4tFcyc
7
D
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
tPage
4000
tFcyc
8
D
Mass erase time2
tMass
20,000
tFcyc
9
C
Byte program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures with
VDD = 5.0 V, bus frequency = 4.0 MHz.
RIDDBP
—4
mA
10
C
Page erase current3
RIDDPE
—6—
mA
11
C
Program/erase endurance4
TL to TH = –40C to + 125C
T = 25
C
4 Typical endurance for Flash is based upon the intrinsic bit cell performance. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
10,000
100,000
cycles
12
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25
C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
years
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