PD
參數(shù)資料
型號： MC9S08JS16LCWJ
廠商： Freescale Semiconductor
文件頁數(shù)： 31/32頁
文件大?。?/td> 0K
描述： MCU 8BIT 16K FLASH 20-SOIC
標(biāo)準(zhǔn)包裝： 38
系列： S08
核心處理器： S08
芯體尺寸： 8-位
速度： 48MHz
連通性： LIN，SCI，SPI，USB
外圍設(shè)備： LVD，POR，PWM
輸入/輸出數(shù)： 14
程序存儲器容量： 16KB（16K x 8）
程序存儲器類型： 閃存
RAM 容量： 512 x 8
電壓 - 電源 (Vcc/Vdd)： 2.7 V ~ 5.5 V
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 20-SOIC（0.295"，7.50mm 寬）
包裝： 管件
MC9S08JS16 Series MCU Data Sheet, Rev. 4
Electrical Characteristics
Freescale Semiconductor
8
PD = Pint + PI/OPint = IDD × VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
PD = K ÷ (TJ + 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA × (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
3.4
Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions must be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. This device was qualified to AEC-Q100 Rev E. A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete DC parametric and functional testing is performed per the applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
3.5
DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table 5. ESD Protection Characteristics
Parameter
Symbol
Value
Unit
ESD Target for Machine Model (MM) — MM circuit
description
VTHMM
200
V
ESD Target for Human Body Model (HBM) — HBM
circuit description
VTHHBM
2000
V
Table 6. DC Characteristics
Num C
Parameter
Symbol
Min
Typical1
Max
Unit
1
Operating voltage2
—
2.7
—
5.5
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC9S08JS8 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Technical Data
MC9S08JS8CFK 功能描述:8位微控制器 -MCU 8 BIT,8K FLASH USB 2.0 RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
MC9S08JS8CWJ 功能描述:8位微控制器 -MCU 8 BIT,8K FLASH USB 2.0 RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
MC9S08JS8L 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Technical Data
MC9S08JS8LCFK 功能描述:8位微控制器 -MCU 8 BIT,8K FLASH 2.0 USB RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
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