TJ
參數(shù)資料
型號： MC9S08FL16CBM
廠商： Freescale Semiconductor
文件頁數(shù)： 3/34頁
文件大?。?/td> 0K
描述： MCU 8BIT 16K FLASH 32-SDIP
標(biāo)準(zhǔn)包裝： 17
系列： S08
核心處理器： S08
芯體尺寸： 8-位
速度： 20MHz
連通性： SCI
外圍設(shè)備： LVD，PWM，WDT
輸入/輸出數(shù)： 30
程序存儲器容量： 16KB（16K x 8）
程序存儲器類型： 閃存
RAM 容量： 1K x 8
電壓 - 電源 (Vcc/Vdd)： 4.5 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 12x8b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 32-SDIP（0.400"，10.16mm）
包裝： 管件
Electrical Characteristics
MC9S08FL16 Series Data Sheet, Rev. 3
Freescale Semiconductor
11
TJ = TA + (PD JA)
Eqn. 1
where:
TA = Ambient temperature, C
JA = Package thermal resistance, junction-to-ambient, C/W
PD = Pint PI/O
Pint = IDD VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O far much smaller than Pint and can be neglected. An approximate relationship
between PD and TJ (if PI/O is neglected) is:
PD = K (TJ + 273 C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD (TA + 273 C) + JA (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for an known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
5.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be taken to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
During the device qualification, ESD stresses were performed for the human body model (HBM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless instructed otherwise in the device
specification.
Table 5. ESD and Latch-Up Test Conditions
Model
Description
Symbol
Value
Unit
Human
body
Series resistance
R1
1500
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
—
Latch-up
Minimum input voltage limit
—
–2.5
V
Maximum input voltage limit
—
7.5
V
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