參數(shù)資料
型號： MC9RS08KA1CDBR
廠商： Freescale Semiconductor
文件頁數(shù)： 61/136頁
文件大?。?/td> 0K
描述： IC CPU RS08 1K FLASH 62RAM 6-DFN
產(chǎn)品培訓模塊： USBSpyder08 Discovery Kit
MC9RS08KA8 Microcontroller
標準包裝： 2,500
系列： RS08
核心處理器： RS08
芯體尺寸： 8-位
速度： 10MHz
外圍設(shè)備： LVD，POR，WDT
輸入/輸出數(shù)： 2
程序存儲器容量： 1KB（1K x 8）
程序存儲器類型： 閃存
RAM 容量： 63 x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 5.5 V
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 6-VDFN 裸露焊盤
包裝： 帶卷 (TR)
Chapter 4 Memory
MC9RS08KA2 Series Data Sheet, Rev. 4
30
Freescale Semiconductor
Up to 1000 program/erase cycles at typical voltage and temperature
Security feature for Flash
4.6.2
Flash Programming Procedure
Programming of Flash memory is done on a row basis. A row consists of 64 consecutive bytes starting
from addresses $3X00, $3X40, $3X80, or $3XC0. Use the following procedure to program a row of Flash
memory:
1. Apply external VPP.
2. Set the PGM bit. This configures the memory for program operation and enables the latching of
address and data for programming.
3. Write any data to any Flash location, via the high page accessing window $00C0–$00FF, within
the address range of the row to be programmed. (Prior to the data writing operation, the PAGESEL
register must be configured correctly to map the high page accessing window to the corresponding
Flash row).
4. Wait for a time, tnvs.
5. Set the HVEN bit.
6. Wait for a time, tpgs.
7. Write data to the Flash location to be programmed.
8. Wait for a time, tprog.
9. Repeat steps 7 and 8 until all bytes within the row are programmed.
10. Clear the PGM bit.
11. Wait for a time, tnvh.
12. Clear the HVEN bit.
13. After time, trcv, the memory can be accessed in read mode again.
14. Remove external VPP.
This program sequence is repeated throughout the memory until all data is programmed.
NOTE
Flash memory cannot be programmed or erased by software code executed
from Flash locations. To program or erase Flash, commands must be
executed from RAM or BDC commands. User code should not enter wait or
stop during erase or program sequence.
These operations must be performed in the order shown; other unrelated
operations may occur between the steps.
4.6.3
Flash Mass Erase Operation
Use the following procedure to mass erase the entire Flash memory:
1. Apply external VPP.
2. Set the MASS bit in the Flash control register.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC9RS08KA1CPC 功能描述:8位微控制器 -MCU 1K FLASH W/ ACMP 62 RAM RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
MC9RS08KA1CSC 功能描述:8位微控制器 -MCU 1K FLASH W/ ACMP 62 RAM RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
MC9RS08KA1CSCR 功能描述:8位微控制器 -MCU 1K FLASH W/ ACMP 62 RAM RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
MC9RS08KA1DB 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Microcontrollers
MC9RS08KA1PC 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Microcontrollers
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