參數(shù)資料
型號: MC8641DHX1250HB
廠商: Freescale Semiconductor
文件頁數(shù): 19/130頁
文件大小: 0K
描述: IC MPU DUAL E600 CORE 1023FCCBGA
標(biāo)準(zhǔn)包裝: 1
系列: MPC86xx
處理器類型: 32-位 MPC86xx PowerPC
速度: 1.25GHz
電壓: 1.05V
安裝類型: 表面貼裝
封裝/外殼: 1023-BCBGA,F(xiàn)CCBGA
供應(yīng)商設(shè)備封裝: 1023-FCCBGA(33x33)
包裝: 托盤
MPC8641 and MPC8641D Integrated Host Processor Hardware Specifications, Rev. 2
Freescale Semiconductor
115
Thermal
Figure 62. Recommended Thermal Model of MPC8641
19.2.4
Temperature Diode
The MPC8641 has a temperature diode on the microprocessor that can be used in conjunction with other
system temperature monitoring devices (such as Analog Devices, ADT7461). These devices use the
negative temperature coefficient of a diode operated at a constant current to determine the temperature of
the microprocessor and its environment. For proper operation, the monitoring device used should
auto-calibrate the device by canceling out the VBE variation of each MPC8641’s internal diode.
The following are the specifications of the MPC8641 on-board temperature diode:
Vf > 0.40 V
Vf < 0.90 V
Operating range 2–300
μA
Diode leakage < 10 nA @ 125
°C
Ideality factor over 5–150
μA at 60°C: n = 1.0275 ± 0.9%
Bump and Underfill
Die
Substrate
C5 solder layer
Die
Substrate
Side View of Model (Not to Scale)
Top View of Model (Not to Scale)
x
y
z
Conductivity
Value
Unit
Die (12.4x15.3x0.86 mm)
Silicon
Temperature
dependent
Bump and Underfill (12.4
× 15.3 × 0.07 mm)
Collapsed Resistance
kz
5.3
W/(m K)
Substrate (33
× 33 × 1.2 mm)
kx
13.5
W/(m K)
ky
13.5
kz
5.3
C5 Solder layer (33
× 33 × 0.4 mm)
kx
0.034
W/(m K)
ky
0.034
kz
9.6
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