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參數(shù)資料
| 型號： | MC79L05ACDR2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | 100 mA Negative Voltage Regulators |
| 中文描述： | 5 V FIXED NEGATIVE REGULATOR, PDSO8 |
| 封裝： | LEAD FREE, SOIC-8 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 115K |
| 代理商： | MC79L05ACDR2G |
MC79L00, MC79L00A Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
A
= +25
°
C, unless otherwise noted.)
Rating
Symbol
Value
Unit
Input Voltage
(5 V)
(12, 15, 18 V)
(24 V)
V
I
30
35
40
Vdc
Power Dissipation
Case 29 (TO92 Type)
T
A
= 25
°
C
Thermal Resistance, JunctiontoAmbient
Thermal Resistance, JunctiontoCase
Case 751 (SOIC8 Type) (Note 1)
T
A
= 25
°
C
Thermal Resistance, JunctiontoAmbient
Thermal Resistance, JunctiontoCase
PD
R
JA
R
JC
PD
R
JA
R
JC
Internally Limited
160
83
Internally Limited
180
45
W
°
C/W
°
C/W
W
°
C/W
°
C/W
Storage Temperature Range
T
stg
65 to +150
°
C
Junction Temperature
T
J
+150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. SOIC8 JunctiontoAmbient Thermal Resistance is for minimum recommended pad size. Refer to Figure 9 for Thermal Resistance variation
versus pad size.
*This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD_883, Method 3015
Machine Model Method 200 V.
ELECTRICAL CHARACTERISTICS
(V
I
= 10 V, I
O
= 40 mA, C
I
= 0.33 F, C
O
= 0.1 F, 40
°
C < T
J
+125
°
C (for MC79LXXAB),
0
°
C < T
J
< +125
°
C (for MC79LXXAC)).
MC79L05C, AB
MC79L05AC, AB
Characteristics
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Output Voltage (T
J
= +25
°
C)
V
O
4.6
5.0
5.4
4.8
5.0
5.2
Vdc
Input Regulation (T
= +25
°
C)
7.0 Vdc
≥
V
I
≥
20 Vdc
8.0 Vdc
≥
V
I
≥
20 Vdc
Reg
line
200
150
150
100
mV
Load Regulation
T
= +25
°
C, 1.0 mA
≤
I
O
≤
100 mA
1.0 mA
≤
I
O
≤
40 mA
Reg
load
60
30
60
30
mV
Output Voltage
7.0 Vdc
≥
V
≥
20 Vdc, 1.0 mA
≤
I
O
≤
40 mA
V
I
= 10 Vdc, 1.0 mA
≤
I
O
≤
70 mA
V
O
4.5
4.5
5.5
5.5
4.75
4.75
5.25
5.25
Vdc
Input Bias Current
(T
J
= +25
°
C)
(T
J
= +125
°
C)
I
IB
6.0
5.5
6.0
5.5
mA
Input Bias Current Change
8.0 Vdc
≥
V
I
≥
20 Vdc
1.0 mA
≤
I
O
≤
40 mA
I
IB
1.5
0.2
1.5
0.1
mA
Output Noise Voltage (T
A
= +25
°
C, 10 Hz
≤
f
≤
100 kHz)
V
n
40
40
V
Ripple Rejection (8.0
≥
V
I
≥
18 Vdc, f = 120 Hz, T
J
= +25
°
C)
RR
40
49
41
49
dB
Dropout Voltage (I
O
= 40 mA, T
J
= +25
°
C)
|V
I
V
O
|
1.7
1.7
Vdc
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