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參數(shù)資料
| 型號： | MC78BC45NTR |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Micropower Voltage Regulator |
| 中文描述： | 4.5 V FIXED POSITIVE LDO REGULATOR, 0.2 V DROPOUT, PDSO5 |
| 封裝： | PLASTIC, SOT-23, 5 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 60K |
| 代理商： | MC78BC45NTR |
MC78BC00 Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
C
= 25
°
C, unless otherwise noted.)
Rating
Symbol
Value
Unit
Input Voltage
V
CC
10
Vdc
Power Dissipation and Thermal Characteristics
Maximum Power Dissipation
Case 1212 (SOT-23) H Suffix
Thermal Resistance, Junction-to-Ambient
P
D
R
q
JA
150
333
mW
°
C/W
Operating Junction Temperature
T
J
125
°
C
Operating Ambient Temperature
T
A
-30 to +80
°
C
Storage Temperature Range
T
stg
-40 to +125
°
C
NOTE:
ESD data available upon request.
ELECTRICAL CHARACTERISTICS
(V
in
= V
O
+ 1.0 V, I
O
= 50 mA, T
J
= 25
°
C 9 (Note 1), unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage
MC78BC30NTR
MC78BC31NTR
MC78BC33NTR
MC78BC40NTR
MC78BC43NTR
MC78BC45NT4
MC78BC50NTR
V
O
2.925
3.023
3.218
3.900
4.193
4.386
4.875
3.0
3.1
3.3
4.0
4.3
4.5
5.0
3.075
3.178
3.382
4.100
4.408
4.613
5.125
V
Line Regulation
V
O
+ 0.5 V
≤
V
in
≤
8.0 V
Reg
line
0
0.1
0.3
mV
Load Regulation
V
in
- V
O
= 1.0 V
1.0 mA
≤
l
O
≤
100 mA
Reg
load
-
40
60
mV
Output Current (Note 2)
V
in
- V
O
= 1.0 V
l
O
-
1000
-
mA
Dropout Voltage
I
O
= 100 mA
V
in
- V
O
-
100
200
mV
Supply Current
V
in
= 8.0 V
V
in
- V
O
= 1.0 V
I
O
= 0 (at no load)
l
ss
-
50
80
A
Supply Current (Standby)
V
in
= 8.0 V
l
standby
0.1
0.2
1.0
A
Ext Leakage Current
l
LK
-
-
0.5
A
Chip Enable Input Logic Voltage
Logic “0” (Regulator “On”)
Logic “1” (Regulator “Off”)
V
CE
0
1.5
-
-
0.25
8.0
V
Chip Enable Input Current
V
CE
= 0.25 V
V
CE
= 1.5 V
l
CEL
-5.0
-
-3.0
-
-0.1
0.1
A
Output Voltage Temperature Coefficient
T
C
-
±
100
-
ppm/
°
C
1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
2. The output current depends upon the performance of External PNP Transistor. Use External PNP Transistor of a low saturation type, with
an H
FE
of 100 or more.
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