參數(shù)資料
型號(hào): MC74VHCT541A
廠商: ON SEMICONDUCTOR
英文描述: Octal Bus Buffer(八總線緩沖器(三態(tài)同相輸出))
中文描述: 八路總線緩沖器(八總線緩沖器(三態(tài)同相輸出))
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 104K
代理商: MC74VHCT541A
MC74VHCT541A
http://onsemi.com
3
V
OL
Symbol
V
IH
Parameter
Test Conditions
V
Typical @ 25
°
C, V
CC
= 5.0V
T
= 25
C
Typ
5.5
7.9
T
= 40 to 85
C
Min
Unit
V
Min
4.4
4.5
Max
±
0.25
Max
Minimum HighLevel Input Voltage
4.5 to 5.5
2.0
3.94
0.1
2.0
3.80
V
V
IL
Maximum LowLevel Input Voltage
4.5 to 5.5
0.8
4.4
0.8
V
0.36
0.1
V
I
in
I
OH
= 8mA
4.5
Maximum LowLevel Output
I
OL
= 8mA
4.5
0.0
0.44
I
OZ
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0ns)
Maximum Input Leakage Current
V
in
= 5.5 V or GND
0 to 5.5
±
0.1
±
1.0
A
Maximum 3State Leakage Current
V
in
= V
IL
or V
IH
±
2.5
A
or GND
I
Output Leakage Current
V
= 5.5V
0
0.5
5.0
A
t
PHL
A
A
1.0
9.0
A to Y
C
L
= 50pF
t
PZL
,
PZH
L
L
PLZ
CC
R
L
t
OSHL
(Note 1)
C
in
Maximum Input Capacitance
4
10
10
pF
C
out
Maximum 3State Output Capacitance
9
pF
C
PD
Power Dissipation Capacitance (Note 2)
1. Parameter guaranteed by design. t
= |t
t
|, t
= |t
t
|.
2. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
/8 (per bit). C
PD
is used to determine the noload
dynamic power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
pF
19
NOISE CHARACTERISTICS
(Input t
r
= t
f
= 3.0ns, C
L
= 50pF, V
CC
= 5.0V)
Symbol
Parameter
T
A
= 25
°
C
Unit
Typ
Max
V
OLP
Quiet Output Maximum Dynamic V
OL
1.2
1.6
V
V
OLV
Quiet Output Minimum Dynamic V
OL
1.2
1.6
V
V
IHD
Minimum High Level Dynamic Input Voltage
2.0
V
V
ILD
Maximum Low Level Dynamic Input Voltage
0.8
V
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