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參數(shù)資料
| 型號： | MC74VHC1GT00DFT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | 2-Input NAND Gate/CMOS Logic Level Shifter |
| 中文描述： | 二輸入與非門/ CMOS邏輯電平轉(zhuǎn)換器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 202K |
| 代理商： | MC74VHC1GT00DFT1 |
LESHAN RADIO COMPANY, LTD.
VHT0–2/4
MC74VHC1GT00
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V
CC
DC Supply Voltage
V
IN
DC Input Voltage
V
OUT
DC Output Voltage
Min
3.0
0.0
0.0
0.0
– 55
0
0
Max
5.5
5.5
5.5
V
CC
+ 125
100
20
Unit
V
V
V
V
CC
=0
High or Low State
T
A
t
r
,t
f
Operating Temperature Range
Input Rise and Fall Time
°C
ns/V
V
CC
= 3.3 ± 0.3 V
V
CC
= 5.0 ± 0.5 V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Temperature °C
Hours
80
1,032,200
90
419,300
100
178,700
110
79,600
120
37,000
130
17,800
140
8,900
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
N
Figure 3. Failure Rate vs. Time Junction Temperature
1
1
10
100
1000
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
Parameter
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Value
Unit
V
V
V
– 0.5 to + 7.0
– 0.5 to +7.0
– 0.5 to +7.0
–0.5 to V
cc
+ 0.5
–20
+20
+ 25
+50
200
333
260
+ 150
–65 to +150
>2000
> 200
N/A
± 500
V
CC
=0
High or Low State
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T
stg
V
ESD
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
CC
and GND
Power dissipation in still air
Thermal resistance
Lead Temperature, 1 mm from Case for 10 s
Junction Temperature Under Bias
Storage temperature
ESD Withstand Voltage
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V
OUT
< GND; V
OUT
> V
CC
SC–88A, TSOP–5
SC–88A, TSOP–5
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 125°C (Note 5)
V
I
LATCH–UP
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
Latch–Up Performance
mA
TIME, YEARS
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC74VHC1GT00DFT2 | 功能描述:邏輯門 3-5.5V Single NAND RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
| MC74VHC1GT00DT1G | 功能描述:邏輯門 3-5.5V Single NAND 2-Input TTL RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
| MC74VHC1GT00DTT1 | 功能描述:邏輯門 3-5.5V Single NAND RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
| MC74VHC1GT02DF1G | 功能描述:邏輯門 LOG CMOS NOR SNGL RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
| MC74VHC1GT02DF2G | 功能描述:邏輯門 LOG CMOS NOR SNGL RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
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