參數(shù)資料
型號： MC74VHC1G00DTT1
廠商： 樂山無線電股份有限公司
英文描述： 2-Input NAND Gate
中文描述： 2輸入與非門
文件頁數(shù)： 2/4頁
文件大?。?/td> 129K
代理商： MC74VHC1G00DTT1
LESHAN RADIO COMPANY, LTD.
VH0–2/4
MC74VHC1G00
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
T
STG
T
L
T
J
θ
JA
Parameter
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
Value
Unit
V
V
V
mA
mA
mA
mA
°C
°C
°C
°C/W
– 0.5 to + 7.0
– 0.5 to V
CC
+ 0.5
– 0.5 to V
CC
+ 0.5
± 20
± 20
± 12.5
± 25
– 65 to + 150
260
+ 150
150
200
150
230
Level 1
UL 94 V–0 (0.125 in)
>2000
> 200
N/A
± 500
SC–70/SC–88A (Note 1)
TSOP–5
P
D
Power Dissipation in Still Air at 85C
SC–70/SC–88A
TSOP–5
mW
MSL
F
R
V
ESD
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 30% – 35%
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 85C (Note 5)
V
I
LATCH–UP
Latch–Up Performance
mA
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm–by–1 inch, 2–ounce copper trace with no air flow.
2. Tested to EIA/JESD22–A114–A.
3. Tested to EIA/JESD22–A115–A.
4. Tested to JESD22–C101–A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V
CC
DC Supply Voltage
V
IN
DC Input Voltage
V
OUT
DC Output Voltage
T
A
Operating Temperature Range
t
r
,t
f
Input Rise and Fall Time
Min
2.0
0.0
0.0
– 55
0
0
Max
5.5
5.5
V
CC
+ 125
100
20
Unit
V
V
V
°C
ns/V
V
CC
= 3.3 ± 0.3 V
V
CC
= 5.0 ± 0.5 V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Temperature °C
Hours
80
1,032,200
90
419,300
100
178,700
110
79,600
120
37,000
130
17,800
140
8,900
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
N
Figure 3. Failure Rate vs. Time Junction Temperature
1
1
10
100
1000
TIME, YEARS
相關(guān)PDF資料
PDF描述
MC74VHC1G00DFT 2-Input NAND Gate
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MC74VHC1G07DFT2 Noninverting Buffer with Open Drain Output
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MC74VHC1G07DTT1 Noninverting Buffer with Open Drain Output
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC74VHC1G00DTT1G 功能描述:邏輯門 2-5.5V Single 2-Input NAND RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel
MC74VHC1G00TT1G 制造商:ON Semiconductor 功能描述:
MC74VHC1G01DFT1 功能描述:邏輯門 2-5.5V Single NAND RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel
MC74VHC1G01DFT1G 功能描述:邏輯門 2-5.5V Single NAND 2-Input w/Open Drain RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel
MC74VHC1G01DFT2 功能描述:邏輯門 2-5.5V Single NAND RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel
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