參數(shù)資料
型號: MC74H04
廠商: ON SEMICONDUCTOR
元件分類: 電容
英文描述: CERAMIC CHIP/MIL-PRF-55681
中文描述: 陶瓷芯片/mil-prf-55681
文件頁數(shù): 2/8頁
文件大?。?/td> 125K
代理商: MC74H04
MC74HC04A
http://onsemi.com
2
Functional operation should be restricted to the Recommended Operating Conditions.
Derating — Plastic DIP: – 10 mW/ C from 65 to 125 C
SOIC Package: – 7 mW/ C from 65 to 125 C
TSSOP Package: – 6.1 mW/ C from 65 to 125 C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
– 0.5 to VCC + 0.5
V
DC Output Voltage (Referenced to GND)
±
25
V
DC Output Current, per Pin
mA
SOIC Package
500
Plastic DIP, SOIC or TSSOP Package
Lead Temperature, 1 mm from Case for 10 Seconds
260
C
RECOMMENDED OPERATING CONDITIONS
Symbol
TA
tr, tf
Parameter
Min
Max
6.0
+ 125
1000
400
Unit
VCC
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
2.0
0
– 55
0
V
V
C
Input Rise and Fall Time
VCC = 6.0 V
0
0
ns
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
(Vin or Vout)
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
VCC.
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