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  • 參數(shù)資料
    型號: MC34152DG
    廠商: ON SEMICONDUCTOR
    元件分類: MOSFETs
    英文描述: Single Output LDO, 250mA, Fixed(3.3V), Low Noise, Fast Transient Response 8-SOIC -40 to 85
    中文描述: 1.5 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8
    封裝: LEAD FREE, PLASTIC, SOIC-8
    文件頁數(shù): 6/12頁
    文件大小: 151K
    代理商: MC34152DG
    MC34152, MC33152, NCV33152
    http://onsemi.com
    6
    I
    I
    Figure 14. Drive Output Rise and Fall Time
    versus Load Capacitance
    Figure 15. Supply Current versus Drive
    Output Load Capacitance
    Figure 16. Supply Current versus Input Frequency
    Figure 17. Supply Current versus Supply Voltage
    C
    L
    , OUTPUT LOAD CAPACITANCE (nF)
    t
    t
    f
    t
    r
    80
    60
    40
    20
    0
    0.1
    1.0
    10
    V
    CC
    = 12 V
    V
    IN
    = 0 V to 5.0 V
    T
    A
    = 25
    °
    C
    C
    L
    , OUTPUT LOAD CAPACITANCE (nF)
    80
    60
    40
    20
    00.1
    1.0
    10
    V
    CC
    = 12 V
    Both Logic Inputs Driven
    0 V to 5.0 V
    50% Duty Cycle
    Both Drive Outputs Loaded
    T
    A
    = 25
    °
    C
    f = 500 kHz
    f = 200 kHz
    f = 50 kHz
    80
    60
    40
    20
    010 k
    100
    1.0 M
    I
    1
    2
    3
    4
    Both Logic Inputs Driven
    0 V to 5.0 V,
    50% Duty Cycle
    Both Drive Outputs Loaded
    T
    A
    = 25
    °
    C
    1 V
    CC
    = 18 V, C
    L
    = 2.5 nF
    2 V
    CC
    = 12 V, C
    L
    = 2.5 nF
    3 V
    CC
    = 18 V, C
    L
    = 1.0 nF
    4 V
    CC
    = 12 V, C
    L
    = 1.0 nF
    f, INPUT FREQUENCY (Hz)
    V
    CC
    , SUPPLY VOLTAGE (V)
    8.0
    6.0
    4.0
    2.0
    00
    4.0
    8.0
    12
    16
    T
    A
    = 25
    °
    C
    Logic Inputs at V
    CC
    Low State Drive Outputs
    Logic Inputs Grounded
    High State Drive Outputs
    APPLICATIONS INFORMATION
    Description
    The MC34152 is a dual noninverting high speed driver
    specifically designed to interface low current digital
    circuitry with power MOSFETs. This device is constructed
    with Schottky clamped Bipolar Analog technology which
    offers a high degree of performance and ruggedness in
    hostile industrial environments.
    Input Stage
    The Logic Inputs have 170 mV of hysteresis with the
    input threshold centered at 1.67 V. The input thresholds are
    insensitive to V
    CC
    making this device directly compatible
    with CMOS and LSTTL logic families over its entire
    operating voltage range. Input hysteresis provides fast
    output switching that is independent of the input signal
    transition time, preventing output oscillations as the input
    thresholds are crossed. The inputs are designed to accept a
    signal amplitude ranging from ground to V
    CC
    . This allows
    the output of one channel to directly drive the input of a
    second channel for masterslave operation. Each input has
    a 30 k pulldown resistor so that an unconnected open
    input will cause the associated Drive Output to be in a
    known low state.
    Output Stage
    Each totem pole Drive Output is capable of sourcing and
    sinking up to 1.5 A with a typical ‘on’ resistance of 2.4
    at 1.0 A. The low ‘on’ resistance allows high output
    currents to be attained at a lower V
    CC
    than with
    comparative CMOS drivers. Each output has a 100 k
    pulldown resistor to keep the MOSFET gate low when V
    CC
    is less than 1.4 V. No over current or thermal protection has
    been designed into the device, so output shorting to V
    CC
    or
    ground must be avoided.
    Parasitic inductance in series with the load will cause the
    driver outputs to ring above V
    CC
    during the turnon
    transition, and below ground during the turnoff transition.
    With CMOS drivers, this mode of operation can cause a
    destructive output latchup condition. The MC34152 is
    immune to output latchup. The Drive Outputs contain an
    internal diode to V
    CC
    for clamping positive voltage
    transients. When operating with V
    CC
    at 18 V, proper power
    supply bypassing must be observed to prevent the output
    ringing from exceeding the maximum 20 V device rating.
    Negative output transients are clamped by the internal NPN
    pullup transistor. Since full supply voltage is applied across
    相關(guān)PDF資料
    PDF描述
    MC33152D HIGH SPEED DUAL MOSFET DRIVERS
    MC33152DR2 HIGH SPEED DUAL MOSFET DRIVERS
    MC33152P HIGH SPEED DUAL MOSFET DRIVERS
    MC33152PG Tag-it(TM) HF-I Plus Transponder Inlays Large Rectangle 0-RFIDN -25 to 70
    MC33152VDR2 Tag-it(TM) HF-I Plus Transponder Inlays Large Rectangle 0-RFIDN -25 to 70
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    MC34152DG 制造商:ON Semiconductor 功能描述:Logic IC
    MC34152DR2 功能描述:功率驅(qū)動器IC 1.5A High Speed Dual RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
    MC34152DR2G 功能描述:功率驅(qū)動器IC 1.5A High Speed Dual Non-Inverting MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
    MC34152P 功能描述:功率驅(qū)動器IC 1.5A High Speed Dual RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
    MC34152PG 功能描述:功率驅(qū)動器IC 1.5A High Speed Dual Non-Inverting MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube