參數(shù)資料
型號: MC34151DR2
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: High Speed Dual MOSFET Drivers
中文描述: 1.5 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8
封裝: SOIC-8
文件頁數(shù): 9/12頁
文件大?。?/td> 284K
代理商: MC34151DR2
MC34151, MC33151
http://onsemi.com
9
PACKAGE DIMENSIONS
PDIP–8
P SUFFIX
CASE 626–05
ISSUE K
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M 1982.
1
4
5
8
F
NOTE 2
–A–
–B–
–T–
SEATING
PLANE
H
J
G
D
K
N
C
L
M
M
A
M
0.13 (0.005)
B
M
T
DIM
A
B
C
D
F
G
H
J
K
L
M
N
MIN
9.40
6.10
3.94
0.38
1.02
2.54 BSC
0.76
0.20
2.92
7.62 BSC
–––
0.76
MAX
10.16
6.60
4.45
0.51
1.78
MIN
0.370
0.240
0.155
0.015
0.040
0.100 BSC
0.030
0.008
0.115
0.300 BSC
–––
0.030
MAX
0.400
0.260
0.175
0.020
0.070
INCHES
MILLIMETERS
1.27
0.30
3.43
0.050
0.012
0.135
10
1.01
10
0.040
SO–8
D SUFFIX
CASE 751–06
ISSUE T
SEATING
1
4
5
8
A
0.25
M
C B
S
S
0.25
M
B
M
h
C
X 45
L
DIM
A
A1
B
C
D
E
e
H
h
L
MIN
1.35
0.10
0.35
0.19
4.80
3.80
MAX
1.75
0.25
0.49
0.25
5.00
4.00
MILLIMETERS
1.27 BSC
5.80
0.25
6.20
0.50
0
7
0.40
1.25
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M 1994.
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUMMOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUMMATERIAL
CONDITION.
D
E
H
A
B
e
B
A1
C
A
0.10
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